类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 建筑学 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | I2C控制字节 | 产品类别 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
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.png) | GS816136DD-150 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 150 MHz | + 70 C | 3.6 V | 0 C | 36 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | N | SDR | SRAM | BGA-165 | 有 | Tray | GS816136DD | Pipeline/Flow Through | Memory & Data Storage | 18 Mbit | 180 mA, 190 mA | 7.5 ns | 512 k x 36 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA1026T-I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 200 YEARS DATA RETENTION | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24AA1026 | 8 | 5.5V | 1.7V | I2C, Serial | 1Mb 128K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 Mb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDMR | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF040B-50-4I-QAE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 1998 | SST25 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 1.27mm | SST25VF040B | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 50MHz | FLASH | SPI | 4MX1 | 1 | 10μs | 4 Mb | 2.7V | 6mm | 5mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MR4A16BCYS35 | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | e3 | 活跃 | 3 (168 Hours) | 54 | EAR99 | Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 54 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 110mA | 180mA | RAM | Parallel | 16b | 1MX16 | 16 | 35ns | 16 Mb | 0.014A | 35 ns | 16b | 1.2mm | 22.22mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS8672D38BE-633I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 633 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II+ | QDR-II | SRAM | BGA-165 | 有 | Tray | GS8672D38BE | SigmaQuad-II+ B4 | Memory & Data Storage | 72 Mbit | 2.76 A | 2 M x 36 | 72 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS8672Q36BGE-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 333 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | Details | QDR-II | SRAM | BGA-165 | 有 | Tray | GS8672Q36BGE | SigmaQuad-II | Memory & Data Storage | 72 Mbit | 1.62 A | 2 M x 36 | 72 | SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS8161Z36DGD-150 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks, 6 Days | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 512 kWords | 36 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 150 MHz | + 70 C | 3.6 V | 0 C | 36 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | Details | SDR | LBGA, | GRID ARRAY, LOW PROFILE | 512000 | PLASTIC/EPOXY | 未说明 | 7.5 ns | 70 °C | 有 | GS8161Z36DGD-150 | 2.5 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.26 | BGA | Commercial grade | SRAM | BGA-165 | YES | 165 | FBGA | 0 to 70 °C | Tray | GS8161Z36DGD | 3A991.B.2.B | NBT | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | 180 mA, 190 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 36 | 1.4 mm | 36 | 18 Mbit | 18874368 bit | Commercial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS8182D18BGD-167 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 167 MHz | + 70 C | 1.9 V | 0 C | 18 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | Details | DDR | SRAM | BGA-165 | 有 | Tray | GS8182D18BGD | SigmaQuad-II | Memory & Data Storage | 18 Mbit | 315 mA | 1 M x 18 | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GS8161Z36DGD-200 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | FBGA | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 36 Bit | 2.7, 3.6 V | 有 | 200 MHz | + 70 C | 3.6 V | 0 C | 36 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | Details | SDR | LBGA, | GRID ARRAY, LOW PROFILE | 512000 | PLASTIC/EPOXY | 未说明 | 6.5 ns | 70 °C | 有 | GS8161Z36DGD-200 | 524288 words | 2.5 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 4.78 | BGA | Commercial grade | SRAM | BGA-165 | YES | 165 | 153.8@Flow-Through/200@Pipelined MHz | 0 to 70 °C | Tray | GS8161Z36DGD | 3A991.B.2.B | NBT | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 2.7 V | COMMERCIAL | 2.3 V | 18 Mbit | SYNCHRONOUS | 210 mA | 6.5@Flow-Through/3@P | 512 k x 36 | 1.4 mm | 36 | 19 Bit | 18 | Commercial | PARALLEL | ZBT SRAM | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25C040X-E/ST | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 512 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 125 °C | 有 | 25C040X-E/ST | 3 MHz | 512 words | 5 V | TSSOP | RECTANGULAR | Microchip Technology Inc | 不推荐 | MICROCHIP TECHNOLOGY INC | 5.38 | SOIC | YES | 8 | TSSOP, TSSOP8,.25 | e3 | 有 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 5 V | AUTOMOTIVE | 4.5 V | SYNCHRONOUS | 0.005 mA | 512X8 | 1.2 mm | 8 | 0.000001 A | 4096 bit | SERIAL | EEPROM | SPI | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE/SOFTWARE | 4.4 mm | 3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1399B-12ZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 3V~3.6V | DUAL | 240 | 1 | 3.3V | 0.55mm | not_compliant | 12GHz | 30 | CY7C1399 | 28 | R-PDSO-G28 | 不合格 | 3.6V | 3.3V | 3V | 256Kb 32K x 8 | 0.055mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 12ns | 0.00002A | 262144 bit | 12 ns | COMMON | 2V | 1.2mm | 11.8mm | 8mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB011-SC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8-SOIC | Non-Volatile | 0°C~70°C TC | Tube | 2001 | Obsolete | 1 (Unlimited) | 2.7V~3.6V | AT45DB011 | 1Mb 264Bytes x 512 pages | 15MHz | FLASH | SPI | 15ms | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR35H128F-WCE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | yes | Discontinued | 1 (Unlimited) | 8 | EAR99 | 8542.32.00.51 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 8 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 128Kb 16K x 8 | SYNCHRONOUS | 5MHz | EEPROM | SPI | 16KX8 | 8 | 5ms | 0.00001A | 131072 bit | SERIAL | SPI | 300000 Write/Erase Cycles | 20 | SOFTWARE | 1.6mm | 5mm | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24MAC602-SSHM-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tube | 2011 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~5.5V | DUAL | 1 | 5V | 1.27mm | AT24MAC602 | R-PDSO-G8 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 256X8 | 8 | 5ms | 2 kb | I2C | 5ms | 1.75mm | 4.925mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT24C128YI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | CAT24C128 | 8 | 5V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | 3mA | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93AA66X/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 1.8V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93AA66 | 8 | 5.5V | 2/5V | Serial | 4Kb 512 x 8 256 x 16 | 3mA | 2MHz | EEPROM | SPI | 256X16 | 3-STATE | 16 | 10ms | 4 kb | 0.00003A | TS 16949 | MICROWIRE | 10000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93AA66-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 1000K ERASE/WRITE CYCLE; 200 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 1 | 3V | 2.54mm | 93AA66 | 8 | 5.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 2MHz | EEPROM | SPI | 256X16 | 16 | 10ms | 4 kb | MICROWIRE | 10ms | 8 | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14U256LA-BA35XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.75mm | 未说明 | 3V | 3.6V | 2.7V | 256Kb 32K x 8 | 60mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 32KX8 | 8 | 35ns | 256 kb | 35 ns | 8b | 1.2mm | 10mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1412BV18-200BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | 锡铅 | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1412 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 725mA | 200MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | 0.37A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V256SA15YG8 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28-SOJ | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 3V~3.6V | IDT71V256 | 256Kb 32K x 8 | 15ns | SRAM | Parallel | 15ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA256-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 通孔 | 8-DIP (0.300, 7.62mm) | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 8542.32.00.51 | 1.8V~5.5V | DUAL | NOT APPLICABLE | 1 | 2.5V | 2.54mm | NOT APPLICABLE | 25AA256 | 8 | R-PDIP-T8 | 不合格 | 5.5V | 2/5V | 1.8V | SPI, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 10MHz | 50 ns | EEPROM | SPI | 32KX8 | 8 | 5ms | 0.000001A | 262144 bit | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.32mm | 9.46mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA64T-E/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 1.7V~5.5V | 未说明 | 未说明 | 24AA64 | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 64 kb | I2C | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M25PE80-VMW6G | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2014 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M25PE80 | 8 | 3.3V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 8mA | 75MHz | 8 ns | FLASH | SPI | 8 | 15ms, 3ms | 1b | 8 Mb | 0.00001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 23ms | 20 | HARDWARE/SOFTWARE | 2.5mm | 5.62mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95640-DRMF3TG/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-WFDFN Exposed Pad | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | M95640 | R-PDSO-N8 | 5.5V | 1.7V | SPI, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 8KX8 | 8 | 4ms | 65536 bit | SPI | 4ms | 0.8mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1371S-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2011 | Obsolete | 3 (168 Hours) | 100 | 8542.32.00.41 | 3.135V~3.6V | DUAL | 1 | 3.3V | 0.65mm | CY7C1371 | R-PDSO-G100 | 3.6V | 3.135V | 18Mb 512K x 36 | 133MHz | 6.5ns | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant |