类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 访问模式 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||
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 | 93LC46CX-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC46C | 8 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 64X16 | 16 | 6ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C25652KV18-400BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2010 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C25652 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 1A | 400MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 72 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT21CS01-SSHM14-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2010 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~3.6V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | AT21CS01 | 3.6V | 1.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF020-20-4I-QAE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST25 | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1.27mm | SST25VF020 | 3.3V | SPI, Serial | 2Mb 256K x 8 | 10mA | 20MHz | 23 ns | FLASH | SPI | 8b | 8 | 20μs | 18b | 2 Mb | 0.000015A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV12816BLL-55BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 2 (1 Year) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.5V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 40 | 48 | 3.3V | 3.6V | 2.5V | 2Mb 128K x 16 | 1 | 3mA | SRAM | Parallel | 16b | 3-STATE | 16 | 55ns | 17b | 2 Mb | 55 ns | COMMON | Asynchronous | 16b | 1V | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | M29W128GL70ZA6F | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, THIN PROFILE | 8000 | PLASTIC/EPOXY | BGA64,8X8,40 | -40 °C | 未说明 | 70 ns | 85 °C | 有 | M29W128GL70ZA6F | 8192 words | 3 V | TBGA | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 7.36 | BGA | YES | 64 | TBGA, BGA64,8X8,40 | e1 | 有 | 3A991.B.1.A | NOR型号 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 闪存 | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | 64 | R-PBGA-B64 | 不合格 | 3.6 V | 3/3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8KX16 | 1.2 mm | 16 | 0.0001 A | 131072 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC161-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | NOT APPLICABLE | 1 | 5V | 2.54mm | NOT APPLICABLE | 11LC161 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | Serial | 16Kb 2K x 8 | 5mA | SYNCHRONOUS | 100kHz | EEPROM | 单线 | 8 | 5ms | 16 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1618KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 40 | CY7C1618 | 165 | 1.8V | 144Mb 4M x 36 | 1 | 610mA | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 23b | 144 Mb | 0.39A | COMMON | Synchronous | 18b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC256F-12LM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 表面贴装 | 表面贴装 | 32-CLCC | 32 | Non-Volatile | -55°C~125°C TC | Tube | 1997 | e0 | no | 活跃 | 3 (168 Hours) | 32 | 锡铅 | 自动写入 | 4.5V~5.5V | QUAD | 225 | 1 | 5V | 1.27mm | 120GHz | 30 | AT28HC256 | 不合格 | 5V | 5V | Parallel, SPI | 256Kb 32K x 8 | 80mA | ASYNCHRONOUS | 120ns | EEPROM | Parallel | 3-STATE | 8 | 3ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 3ms | YES | YES | 64words | 2.54mm | 13.97mm | 11.43mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST38VF6401-90-5I-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST38 | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 0.8mm | SST38VF6401 | 不合格 | 3.3V | 64Mb 4M x 16 | 18mA | 90ns | FLASH | Parallel | 16b | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00003A | Asynchronous | 16b | YES | YES | YES | 1K | 4K | 4words | YES | BOTTOM | YES | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV93C76VE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | ACTIVE (Last Updated: 1 week ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 8 | 5.5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 512X16 | 16 | 8 kb | MICROWIRE | 8 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT27BV256-70JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2017 | 活跃 | 2 (1 Year) | 32 | ALSO OPERATES AT 5V SUPPLY | 2.7V~3.6V 4.5V~5.5V | QUAD | 1 | 3V | 1.27mm | R-PQCC-J32 | 3.6V | 2.7V | 256Kb 32K x 8 | ASYNCHRONOUS | 70ns | EPROM | Parallel | 32KX8 | 8 | 262144 bit | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC040AT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.65mm | 40 | 25LC040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST39VF1602-70-4C-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 0.8mm | SST39VF1602 | 3.3V | 16Mb 1M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 10μs | 20b | 16 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | TOP | YES | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25V02A-DGQTR | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2002 | F-RAM™ | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 2V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.95mm | 未说明 | R-PDSO-N8 | 3.6V | 2.7V | SPI, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 40MHz | FRAM | SPI | 32KX8 | 8 | 262144 bit | 0.8mm | 4.5mm | 4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25320HU4I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-UFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 5V | 0.5mm | CAT25320 | 8 | 不合格 | 5.5V | 2/5V | SPI, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 5ms | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 0.55mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF801C-70-4C-EKE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) - annealed | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 0.5mm | 5MHz | 40 | SST39VF801C | 48 | 3.3V | 3.6V | 2.7V | 8Mb 512K x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | BOTTOM | YES | 1.05mm | 18.5mm | 12.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93A56RFVT-WME2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 0.65mm | 未说明 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.5V | 2Kb 128 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 128X16 | 16 | 5ms | 0.000002A | 2048 bit | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF064C-80-4I-SCE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | SST25 | Obsolete | 3 (168 Hours) | 2.7V~3.6V | SST25VF064C | 3.3V | SPI, Serial | 64Mb 8M x 8 | 12mA | 80MHz | 6 ns | FLASH | SPI - Dual I/O | 8b | 2.5ms | 1b | 64 Mb | Synchronous | 8b | 256B | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | EDB1332BDBH-1DIT-F-D | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 134-VFBGA | 134 | Volatile | -40°C~85°C TC | Bulk | 2008 | e1 | 最后一次购买 | 3 (168 Hours) | 134 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1.14V~1.95V | BOTTOM | 260 | 1 | 1.2V | 0.65mm | 30 | 1.2V | 1.3V | 1.14V | 1Gb 32M x 32 | 1 | SYNCHRONOUS | DRAM | Parallel | 32b | 32MX32 | 32 | 13b | 1 Gb | 533MHz | 单库页面突发 | 1mm | 11.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY15B104Q-LHXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tube | 2013 | F-RAM™ | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 2V~3.6V | DUAL | 1 | 3.3V | 1.27mm | R-PDSO-N8 | 3.6V | 2V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 40MHz | FRAM | SPI | 512KX8 | 8 | 4194304 bit | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62147G30-55ZSXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~125°C TA | Tray | 2012 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62147 | R-PDSO-G44 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 55ns | 4194304 bit | 55 ns | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1460AV33-250AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 2006 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1460 | 100 | 3.3V | 3.6V | 3.135V | 36Mb 1M x 36 | 4 | 475mA | 250MHz | 2.6ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.12A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST39LF801C-55-4C-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | SST39LF801 | 3.3V | 8Mb 512K x 16 | 18mA | 55ns | FLASH | Parallel | 16b | 512KX16 | 16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 256 | 2K | YES | BOTTOM | YES | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC080CT-H/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~150°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 3A001.A.2.A | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 1.27mm | 40 | 25LC080C | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 5MHz | 100 ns | EEPROM | SPI | 8 | 6ms | 8 kb | SPI | 6ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant |