类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 页面尺寸 | 刷新周期 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | CY7C1347G-200AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.15V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1347 | 100 | 3.3V | 3.63V | 3.135V | 4.5Mb 128K x 36 | 4 | 265mA | 200MHz | 2.8ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | 93LC66CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66C | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | CY7C136E-55JXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2005 | e3 | Obsolete | 3 (168 Hours) | 52 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 1 | 5V | 5V | 5V | 16Kb 2K x 8 | 2 | 160mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 22b | 16 kb | 0.015A | 55 ns | COMMON | Asynchronous | 8b | 5.08mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | MR2A16ACMA35 | Everspin Technologies Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-LFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 48 | EAR99 | 8542.32.00.71 | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.75mm | 48 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 105mA | 165mA | RAM | Parallel | 16b | 256KX16 | 16 | 35ns | 4 Mb | 0.028A | 35 ns | 16b | 1.35mm | 8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL512SDPMFI011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2015 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 66MHz | 0.075mA | FLASH | SPI - Quad I/O | 8b | 64MX8 | 8 | 0.0001A | 512753664 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 2.65mm | 10.3mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | CY62157EV30LL-45BVXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY62157 | 48 | 3V | 3.6V | 2.2V | 8Mb 512K x 16 | 1 | 25mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 19b | 8 Mb | 0.000005A | 45 ns | COMMON | Asynchronous | 16b | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | CY7C1518KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 最后一次购买 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1518 | 165 | 1.8V | 72Mb 4M x 18 | 1 | 430mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 22b | 72 Mb | COMMON | Synchronous | 18b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43TR16640B-125JBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | 未说明 | 1 | 1.5V | 0.8mm | 未说明 | R-PBGA-B96 | 1.575V | 1.425V | 1Gb 64M x 16 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 64MX16 | 16 | 15ns | 1073741824 bit | 1.2mm | 13mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | 24AA08H-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA08H | 8 | 5V | 1.7V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
![]() | 24AA044-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24AA044 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 4KX1 | 1 | 5ms | 4096 bit | TS 16949 | I2C | 5ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL512T11DHV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~105°C TA | Tray | GL-T | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 2.7V | 512Mb 64M x 8 | ASYNCHRONOUS | 110ns | FLASH | Parallel | 32MX16 | 16 | 60ns | 536870912 bit | 2.7V | 8 | 1.4mm | 9mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M95040-MN6TP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | M95040 | 8 | R-PDSO-G8 | 5V | 5V | SPI, Serial | 4Kb 512 x 8 | 10MHz | 60 ns | EEPROM | SPI | 512X8 | 8 | 5ms | 4 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | AT24C01D-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | ALSO OPERATES AT MIN 1.7 V AT 100 KHZ | 8542.32.00.51 | 1.7V~5.5V | DUAL | 1 | 3V | 0.5mm | AT24C01 | R-PDSO-N8 | 3.6V | 2.5V | 1Kb 128 x 8 | SYNCHRONOUS | 1MHz | 4.5μs | EEPROM | I2C | 128X8 | 8 | 5ms | 1024 bit | SERIAL | I2C | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 24C02CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C02C | 8 | 5V | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 1.5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1.5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | CY7C1355C-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2003 | NoBL™ | e4 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | FLOW-THROUGH | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | CY7C1355 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 250mA | 133MHz | 6.5ns | SRAM | Parallel | 256KX36 | 36 | 18b | 9 Mb | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1320CV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 20 | CY7C1320 | 165 | 1.8V | 18Mb 512K x 36 | 1 | 775mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 18 Mb | 0.32A | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | MT41J128M16HA-15E:D | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 96-TFBGA | 96 | Volatile | 0°C~95°C TC | Tray | 2012 | e1 | yes | Obsolete | 3 (168 Hours) | 96 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.36 | 1.425V~1.575V | BOTTOM | 260 | 1 | 1.5V | 0.8mm | 30 | MT41J128M16 | 96 | 1.5V | 1.575V | 1.425V | 2Gb 128M x 16 | 1 | 255mA | 667MHz | 13.5ns | DRAM | Parallel | 16b | 128MX16 | 3-STATE | 16 | 17b | 2 Gb | 0.012A | COMMON | 8192 | 8 | 8 | 1.2mm | 14mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
![]() | BRCB016GWL-3E2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 5-UFBGA, CSPBGA | 5 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2013 | 活跃 | 1 (Unlimited) | 5 | 1.7V~3.6V | BOTTOM | 未说明 | 1 | 0.4mm | 未说明 | 不合格 | 3.6V | 1.8/3.3V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 2KX8 | 8 | 5ms | 16 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 40 | HARDWARE | 1010MMMR | 1.1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | SST26WF016BT-104I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | SST26WF016 | R-PDSO-G8 | 1.8V | 1.95V | 1.65V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 16MX1 | 1 | 1.5ms | 16 Mb | TS 16949 | 256B | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL128LAGMFV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2016 | FL-L | yes | 活跃 | 3 (168 Hours) | 8 | IT IS ALSO CONFIGURED AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 32MX4 | 4 | 134217728 bit | SERIAL | 3V | 2 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | AT29C010A-90JI | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) | Non-Volatile | -40°C~85°C TC | Tube | 1996 | Obsolete | 2 (1 Year) | 4.5V~5.5V | AT29C010 | 1Mb 128K x 8 | 90ns | FLASH | Parallel | 10ms | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25G128NUX-3TR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2014 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 1.8V | 0.5mm | 未说明 | R-PDSO-N8 | 5.5V | 1.6V | SPI, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 16KX8 | 8 | 5ms | 131072 bit | SPI | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24AA16T-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1 MILLION ERASE/WRITE CYCLES | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA16 | 8 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 16 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
![]() | CY62167EV18LL-55BVI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e0 | 活跃 | 3 (168 Hours) | 48 | 锡铅 | 1.65V~2.25V | BOTTOM | 240 | 1 | 1.8V | 0.75mm | 30 | CY62167 | 48 | 1.8V | 2.25V | 16Mb 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 20b | 16 Mb | 55 ns | COMMON | Asynchronous | 16b | 1V | 8mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | 93C66A-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66A | 8 | 5V | 5V | Serial | 4Kb 512 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 |