类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | CY7C1356CV25-166AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | Matte Tin (Sn) | 流水线结构 | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 20 | CY7C1356 | 100 | 2.5V | 9Mb 512K x 18 | 2 | 180mA | 166MHz | 3.5ns | SRAM | Parallel | 3-STATE | 18 | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 1.6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1062DV33-10BGXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 119-BGA | 119 | Volatile | -40°C~85°C TA | Tray | 2002 | e1 | yes | Obsolete | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 20 | CY7C1062 | 119 | 3.3V | 3.6V | 3V | 16Mb 512K x 32 | 1 | 175mA | 175mA | SRAM | Parallel | 3-STATE | 32 | 10ns | 19b | 16 Mb | 0.025A | COMMON | Asynchronous | 32b | YES | 2.4mm | 22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | M27W401-80N6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | 32 | Non-Volatile | -40°C~85°C TA | Tray | e3/e6 | Obsolete | 3 (168 Hours) | 32 | EAR99 | TIN/TIN BISMUTH | 2.7V~3.6V | TRIPLE | 260 | 1 | 3V | 0.5mm | M27W401 | 32 | 3V | 3.6V | 2.7V | 4Kb 512 x 8 | 80ns | EPROM | Parallel | 512KX8 | 3-STATE | 8 | 4 Mb | 0.000015A | COMMON | 1.2mm | 18.4mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 34AA04T-I/MUY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Gold | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium (Ni/Pd) | 1.7V~3.6V | DUAL | 260 | 1 | 2.2V | 0.5mm | 40 | 34AA04 | R-PDSO-N8 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 350ns | EEPROM | I2C | 512X8 | 8 | 5ms | 4096 bit | TS 16949 | I2C | 5ms | 0.55mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1041G30-10ZSXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~125°C TA | Tray | 2014 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | DUAL | 1 | 3V | 0.8mm | CY7C1041 | R-PDSO-G44 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 10ns | 4194304 bit | 10 ns | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62128BLL-70SC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | 0°C~70°C TA | Tube | 2005 | MoBL® | e0 | Obsolete | 1 (Unlimited) | 32 | EAR99 | Tin/Lead (Sn/Pb) | 4.5V~5.5V | DUAL | 225 | 1 | 5V | not_compliant | 70GHz | 30 | CY62128 | 32 | 不合格 | 5V | 5V | 1Mb 128K x 8 | 1 | 15mA | SRAM | Parallel | 3-STATE | 70ns | 17b | 1 Mb | 70 ns | COMMON | Asynchronous | 8b | 2V | -100μm | 20.75mm | 11.43mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C136E-55NXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 52-BQFP | 52 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2011 | Obsolete | 3 (168 Hours) | 52 | EAR99 | 4.5V~5.5V | QUAD | 1 | 5V | 0.65mm | 5V | 5V | 16Kb 2K x 8 | 2 | 160mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 22b | 16 kb | 0.015A | 55 ns | COMMON | Asynchronous | 8b | 10mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF032B-66-4I-S2AF-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | SST25 | e4 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 镍钯金 | 2.7V~3.6V | DUAL | 1 | 1.27mm | SST25VF032B | 3.3V | 3.6V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 20mA | 66MHz | 6 ns | FLASH | SPI | 8b | 32MX1 | 1 | 10μs | 1b | 32 Mb | 0.00002A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 2.16mm | 5.275mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | S29AS016J70TFI040 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | AS-J | Obsolete | 3 (168 Hours) | 48 | EAR99 | 底部启动区块 | 8542.32.00.51 | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 0.5mm | 30 | 1.8V | 1.95V | 1.65V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 8b | 1MX16 | 16 | 70ns | 20b | 16 Mb | 70 ns | Asynchronous | 8 | BOTTOM | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
| CY62138FLL-45SXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | 2001 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY62138 | 32 | 5V | 5V | 2Mb 256K x 8 | 1 | 18mA | SRAM | Parallel | 256KX8 | 3-STATE | 8 | 45ns | 18b | 2 Mb | 0.000005A | 45 ns | COMMON | Asynchronous | 8b | 2V | 2.997mm | 20.4465mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB161D-MU-2.5 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-VDFN Exposed Pad | 8-VDFN (6x5) | Non-Volatile | -40°C~85°C TC | Tray | Obsolete | 3 (168 Hours) | 2.5V~3.6V | AT45DB161 | 16Mb 528Bytes x 4096 pages | 50MHz | FLASH | SPI | 6ms | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV20488BLL-25TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 44 | Matte Tin (Sn) - annealed | 2.4V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 40 | 44 | 3.6V | 2.5/3.3V | 2.4V | 16Mb 2M x 8 | 1 | 30mA | SRAM | Parallel | 2MX8 | 3-STATE | 8 | 25ns | 21b | 16 Mb | 25 ns | COMMON | Asynchronous | 8b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2663KV18-550BZI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tube | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead/Silver (Sn/Pb/Ag) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | 30 | CY7C2663 | 165 | 1.8V | 1.9V | 1.7V | 144Mb 8M x 18 | 2 | 550MHz | 450 ps | SRAM | Parallel | 8MX18 | 3-STATE | 18 | 21b | 144 Mb | 0.5A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256E-25UM/883-815 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 28-BCPGA | NO | Non-Volatile | -55°C~125°C TC | Tray | 1997 | yes | 活跃 | 1 (Unlimited) | 28 | 自动写入 | 4.5V~5.5V | PERPENDICULAR | 1 | 5V | 2.54mm | R-CPGA-P28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 250ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 4.4mm | 16.51mm | 13.97mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24128-BWDW6T | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e0 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 锡铅 | 2.5V~5.5V | DUAL | 1 | 5V | 0.65mm | M24128 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | 5mA | 1MHz | 450ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA044-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2002 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA044 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | 400μA | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 4 kb | TS 16949 | I2C | 5ms | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C86C-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C86C | 8 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 2ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | CY7C1412KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1412 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 610mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 20b | 36 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | CY62148ESL-55ZAXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | IT ALSO OPERATES AT 5V SUPPLY | 2.2V~3.6V 4.5V~5.5V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | CY62148 | 3.6V | 2.5/3.3/5V | 2.2V | 4Mb 512K x 8 | 1 | 20mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 0.000007A | 55 ns | COMMON | Asynchronous | 8b | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | W29N01HVSINF | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.488, 12.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | yes | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 3.3V | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX8 | 8 | 25ns | 28b | 1 Gb | 2.1kB | 1.2mm | 18.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF402C-70-4I-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF402C | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 18mA | 70ns | FLASH | Parallel | 256KX16 | 16 | 10μs | 1b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | TOP | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
 | AT25160N-10SC-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Non-Volatile | 0°C~70°C TA | Tube | Obsolete | 1 (Unlimited) | 2.7V~5.5V | AT25160 | 16Kb 2K x 8 | 3MHz | EEPROM | SPI | 5ms | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1911KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 3A991 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 1mm | CY7C1911 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 2M x 9 | 2 | 430mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 9 | 19b | 18 Mb | SEPARATE | Synchronous | 9b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC04B-I/SNG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 5 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24LC04B | 8 | 不合格 | 5.5V | 3/5V | 2.5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXMR | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | AS6C4008-55TIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | 2006 | yes | 活跃 | 3 (168 Hours) | 32 | 2.7V~5.5V | DUAL | 260 | 1 | 3V | 40 | 32 | 3V | 5.5V | 3/5V | 2.7V | 4Mb 512K x 8 | 1 | 60mA | SRAM | Parallel | 3-STATE | 55ns | 19b | 4 Mb | 0.00003A | 55 ns | COMMON | 2V | 1mm | 8mm | 18.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |