类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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S29GL128P10TFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | GL-P | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | R-PDSO-G56 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | 0.11mA | FLASH | Parallel | 128MX1 | 1 | 100ns | 128 Mb | 0.000005A | 100 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL01GT11FHB020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | -40°C | Automotive grade | 表面贴装 | 64-LBGA | YES | 105°C | Tray | 活跃 | 3 (168 Hours) | 64 | CAN ALSO ORGANISED AS 1GX1 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 3V | 1mm | 未说明 | R-PBGA-B64 | 3.6V | INDUSTRIAL | 2.7V | ASYNCHRONOUS | 64MX16 | 16 | 1073741824 bit | AEC-Q100 | 110 ns | PARALLEL | FLASH | 2.7V | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93C76C-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93C76CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY14B104LA-ZS25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tube | 2011 | e4 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 44 | 3V | 3.6V | 2.7V | 4Mb 512K x 8 | 70mA | NVSRAM | Parallel | 8b | 512KX8 | 8 | 25ns | 4 Mb | 0.005A | 25 ns | 8b | 1.194mm | 18.415mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93LC56AT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93LC56A | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93C66BT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66B | 8 | 5V | 5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42S16160G-7TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 54 | EAR99 | 哑光锡 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 3.3V | 3.6V | 3V | 256Mb 16M x 16 | 1 | 130mA | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15b | 256 Mb | 0.004A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL512T10FHI040 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | -40°C | 表面贴装 | 64-LBGA | YES | 85°C | Tray | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.51 | BOTTOM | BALL | 1 | 3V | 1mm | R-PBGA-B64 | 3.6V | INDUSTRIAL | 2.7V | ASYNCHRONOUS | 32MX16 | 16 | 536870912 bit | 100 ns | PARALLEL | FLASH | 2.7V | 8 | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TH58NVG2S3HTAI0 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48-TSOP I | Non-Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 2.7V~3.6V | 4Gb 512M x 8 | 25ns | FLASH | Parallel | 25ns | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1324H-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2003 | e3 | Obsolete | 3 (168 Hours) | 100 | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 3.15V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | unknown | 20 | CY7C1324 | 100 | 不合格 | 3.3V | 3.6V | 3.135V | 2Mb 128K x 18 | 2 | 225mA | 133MHz | 6.5ns | SRAM | Parallel | 3-STATE | 18 | 17b | 2 Mb | 0.04A | COMMON | Synchronous | 18b | 3.14V | 1.6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1320CV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1320 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 250MHz | 0.775mA | 450 ps | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 18 Mb | 0.32A | COMMON | 1.7V | 1.4mm | 15mm | 13mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1460AV25-167BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2004 | NoBL™ | e1 | yes | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 2.375V~2.625V | BOTTOM | 260 | 1 | 2.5V | 1mm | 20 | CY7C1460 | 165 | 2.5V | 2.625V | 2.375V | 36Mb 1M x 36 | 4 | 335mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.12A | COMMON | Synchronous | 36b | 2.38V | 17mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR25H320F-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2012 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 32Kb 4K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | SERIAL | SPI | 300000 Write/Erase Cycles | 4ms | 20 | HARDWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
W949D6DBHX5I | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 60-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | 2016 | 活跃 | 3 (168 Hours) | 60 | AUTO/SELF REFRESH | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | R-PBGA-B60 | 1.95V | 1.7V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 200MHz | 5ns | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | 1.025mm | 9mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
24LC01B/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24LC01B | 8 | 5.5V | 3/5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 3500ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.00003A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.2mm | 4.4mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1381F-133BGC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 表面贴装 | 119-BGA | 119 | Volatile | 0°C~70°C TA | Tray | 2004 | e0 | Obsolete | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.135V~3.6V | BOTTOM | 220 | 1 | 3.3V | 1.27mm | not_compliant | 未说明 | CY7C1381 | 119 | 不合格 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 133MHz | 0.21mA | 6.5ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 18 Mb | 0.07A | COMMON | 3.14V | 2.4mm | 22mm | 14mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MX25U1635EM2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | MX25xxx35/36 - MXSMIO™ | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | ALSO CONFIGURABLE AS 16M X 1 | 8542.32.00.51 | 1.65V~2V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | 8 | R-PDSO-G8 | 不合格 | 2V | 2V | 1.8V | 1.65V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 4MX4 | 4 | 30μs, 3ms | 16 Mb | 0.00002A | 1.8V | SPI | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | 2 | 2.16mm | 5.28mm | 5.23mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL256P11TFI023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-P | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 不合格 | 3.6V | 3/3.3V | 2.7V | 256Mb 32M x 8 | 110mA | FLASH | Parallel | 1 | 110ns | 256 Mb | 0.000005A | 110 ns | Asynchronous | 3V | 8 | YES | YES | YES | 256 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
11AA02E64-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | 1997 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 100kHz | 11AA02E64 | Serial | 5.5V | 1.8V | 2Kb 256 x 8 | 5mA | 100kHz | 5 ms | EEPROM | 单线 | 5ms | 2 kb | 100kHz | 1.5mm | 4.9mm | 3.9mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93AA56-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 1000K ERASE/WRITE CYCLE; 200 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 1 | 3V | 2.54mm | 93AA56 | 8 | 5.5V | Serial | 2Kb 256 x 8 128 x 16 | 3mA | 2MHz | 2 μs | EEPROM | SPI | 16 | 10ms | 2 kb | MICROWIRE | 10ms | 8 | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS62WV1288BLL-55HI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | e0 | no | 活跃 | 2 (1 Year) | 32 | EAR99 | Tin/Lead (Sn/Pb) | 2.5V~3.6V | DUAL | 1 | 3V | 0.5mm | 32 | 3.3V | 3.6V | 2.5V | 1Mb 128K x 8 | 1 | 8mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 17b | 1 Mb | 0.000005A | 55 ns | COMMON | Asynchronous | 8b | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL256LAGMFM000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tray | 2016 | Automotive, AEC-Q100, FL-L | 活跃 | 3 (168 Hours) | 16 | IT ALSO HAVE MEMORY WIDTH X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 64MX4 | 4 | 268435456 bit | SERIAL | 3V | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL01GT11FHIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-T | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | R-PBGA-B64 | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | 110ns | FLASH | Parallel | 64MX16 | 16 | 60ns | 1073741824 bit | 2.7V | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1381KV33-133AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 100-LQFP | YES | Volatile | -40°C~85°C TA | Tray | 2004 | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.B | 8542.32.00.41 | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | R-PQFP-G100 | 3.6V | 3.135V | 18Mb 512K x 36 | 133MHz | 6.5ns | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant |