类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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![]() | CY7C1460AV25-167BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e0 | no | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 2.375V~2.625V | BOTTOM | 220 | 1 | 2.5V | 1mm | CY7C1460 | 165 | 2.5V | 2.625V | 2.375V | 36Mb 1M x 36 | 4 | 335mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.12A | COMMON | Synchronous | 36b | 2.38V | 17mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CYD18S72V-133BBC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 484-BGA | 484 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 484 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE OR FLOW-THROUGH | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | not_compliant | 未说明 | CYD18S72 | 484 | 不合格 | 3.3V | 3.465V | 3.135V | 18Mb 256K x 72 | 2 | 580mA | 133MHz | 5ns | SRAM | Parallel | 3-STATE | 72 | 36b | 18 Mb | 0.075A | COMMON | Synchronous | 72b | 3.14V | 1.9mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62256NLL-55SNXET | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2002 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY62256 | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 50mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 55ns | 15b | 256 kb | 55 ns | COMMON | Asynchronous | 8b | 2V | 2.794mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB321E-MHF-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-UDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 不合格 | 3.6V | 2.5/3.3V | 2.3V | SPI, Serial | 32Mb 528Bytes x 8192 pages | 22mA | 22mA | 85MHz | 8 ns | FLASH | SPI | 8b | 32MX1 | 1 | 8μs, 4ms | 22b | 32 Mb | 0.000001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 512B | 0.6mm | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | 23A1024-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.7V~2.2V | DUAL | NOT APPLICABLE | 1 | 2.54mm | NOT APPLICABLE | 23A1024 | R-PDIP-T8 | 不合格 | 2.2V | 1.8/2V | 1.7V | 1Mb 128K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 128KX8 | 3-STATE | 8 | 0.000012A | 1048576 bit | 32 ns | SERIAL | COMMON/SEPARATE | 1.7V | NO | NO | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S32800G-6BL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 表面贴装 | 90-TFBGA | 90 | Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 90 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 90 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 180mA | SYNCHRONOUS | 166MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | 3-STATE | 32 | 14b | 256 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 23A512-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Automotive grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.7V~2.2V | DUAL | NOT APPLICABLE | 1 | 2.54mm | NOT APPLICABLE | 23A512 | 2.2V | 1.7V | 512Kb 64K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 8 | TS 16949 | SERIAL | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FS512SAGBHI210 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FS-S | 活跃 | 3 (168 Hours) | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1.7V~2V | BOTTOM | 未说明 | 1 | 1.8V | 1mm | 未说明 | R-PBGA-B24 | 2V | 1.7V | 512Mb 64M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | SERIAL | 1.8V | 2 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB321D-SU | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | 3A991.B.1.A | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 32Mb 528Bytes x 8192 pages | 15mA | 15mA | 66MHz | 6 ns | FLASH | SPI | 8b | 32MX1 | 1 | 6ms | 1b | 32 Mb | Synchronous | 8b | 2.7V | 512B | 2.16mm | 5.29mm | 无 | Unknown | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT24C21WI-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 3V | 1.27mm | CAT24C21 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 1Kb 128 x 8 | 2mA | 400kHz | 1μs | EEPROM | I2C | 无卤素 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | 1010XXXR | 1.5mm | 5mm | 4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S32800J-6BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 90-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 90 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | R-PBGA-B90 | 3.6V | 3V | 256Mb 8M x 32 | 1 | SYNCHRONOUS | 166MHz | 5.4ns | DRAM | Parallel | 8MX32 | 32 | 268435456 bit | 1.2mm | 13mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC56AXT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC56A | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C86CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C86C | 8 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 2ms | 16 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC040AT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.65mm | 40 | 25LC040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC040AT-H/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~150°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 3A001.A.2.A | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 4 kb | SPI | 6ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C66AT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66A | 8 | 5V | 5V | Serial | 4Kb 512 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29AL016J70TFN020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~125°C TA | Tray | 2015 | AL-J | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 1MX16 | 16 | 70ns | 16 Mb | 0.000005A | 70 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1420AV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | not_compliant | 未说明 | CY7C1420 | 165 | 不合格 | 1.8V | 36Mb 1M x 36 | 1 | 825mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 20b | 36 Mb | 0.35A | COMMON | Synchronous | 36b | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M27C1001-70F1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 32-CDIP (0.600, 15.24mm) Window | 32 | Non-Volatile | 0°C~70°C TA | Tube | e3 | yes | Obsolete | 1 (Unlimited) | 32 | EAR99 | Matte Tin (Sn) | 00.1.142 | 4.5V~5.5V | DUAL | 245 | 1 | 5V | 2.54mm | 70GHz | 未说明 | M27C1001 | 32 | 不合格 | 5V | 5V | 1Mb 128K x 8 | 50mA | 50mA | ASYNCHRONOUS | 70ns | EPROM | Parallel | 128KX8 | 3-STATE | 1 Mb | 0.0001A | COMMON | 4.5mm | 42.04mm | 13.36mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M27C1001-45XF1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 32-CDIP (0.600, 15.24mm) Window | 32 | Non-Volatile | 0°C~70°C TA | Tube | e3 | yes | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 00.1.142 | 4.75V~5.25V | DUAL | 245 | 1 | 5V | 2.54mm | M27C1001 | 32 | 5V | 5V | 1Mb 128K x 8 | 50mA | 45ns | EPROM | Parallel | 128KX8 | 3-STATE | 1 Mb | 0.0001A | COMMON | 4.5mm | 42.04mm | 13.36mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT25080VI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | CAT25080 | 8 | 5.5V | 2/5V | 2.5V | 2-Wire, SPI, Serial | 8Kb 1K x 8 | 2mA | 20MHz | 40 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | W25X40BVSNIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 16.5mA | 104MHz | 7 ns | FLASH | SPI | 4MX1 | 1 | 3ms | 24b | 4 Mb | 0.000005A | Synchronous | 1b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.72mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT34C04-MA5M-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -20°C~125°C TA | Tape & Reel (TR) | 2012 | e4 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | 1.7V~3.6V | DUAL | 1 | 2.2V | 0.5mm | R-PDSO-N8 | 3.6V | 1.7V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | EEPROM | I2C | 4KX1 | 1 | 5ms | 4096 bit | SERIAL | I2C | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24VL014HT/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -20°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 1.5V~3.6V | DUAL | 260 | 1 | 1.8V | 0.65mm | 40 | 24VL014H | 8 | 不合格 | 3.3V | 3.6V | 1.5V | I2C, Serial | 1Kb 128 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28HC256E-90TU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | 28 | Non-Volatile | -40°C~85°C TC | Tray | 1997 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.55mm | 90GHz | 未说明 | AT28HC256 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 80mA | ASYNCHRONOUS | 90ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 256 kb | 0.0003A | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | NO | 64words | 1.2mm | 11.8mm | 8mm | ROHS3 Compliant | 无铅 |