类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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![]() | IS25WQ040-JNLE-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 1.65V~1.95V | 1.8V | SPI, Serial | 4Mb 512K x 8 | 104MHz | 8 ns | FLASH | SPI | 1ms | 19b | 32 Mb | 256B | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC256T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 8-WFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e4 | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 0.5mm | 40 | 24LC256 | 不合格 | 5.5V | 2.5V | I2C, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 0.000005A | 262144 bit | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | NO | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC66AT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66A | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25160B-MAHL-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 8 | EAR99 | ALSO OPERATES AT MIN 1.8 V AT 5 MHZ | 8542.32.00.51 | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | R-PDSO-N8 | 5.5V | 4.5V | 16Kb 2K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 2KX8 | 8 | 5ms | 16384 bit | SERIAL | SPI | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S32800B-7BL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 90-LFBGA | 90 | Volatile | 0°C~70°C TA | Tray | e1 | Obsolete | 3 (168 Hours) | 90 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 10 | 90 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 150mA | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 32b | 8MX32 | 32 | 14b | 256 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.45mm | 13mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL256S90TFA010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2017 | GL-S | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | R-PDSO-G56 | 3.6V | 2.7V | 256Mb 16M x 16 | ASYNCHRONOUS | 90ns | FLASH | Parallel | 32MX8 | 8 | 60ns | 268435456 bit | AEC-Q100 | 3V | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25L640F-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | BR25L640 | 8 | 不合格 | 5V | SPI, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 5MHz | EEPROM | SPI | 8 | 5ms | 64 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1.6mm | 5mm | 4.4mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC56BXT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC56B | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 128 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB041D-SU | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 8 | 3.6V | 2.7V | SPI, Serial | 4Mb 264Bytes x 2048 pages | 15mA | 66MHz | 6 ns | FLASH | SPI | 8b | 4MX1 | 4ms | 1b | 4 Mb | Synchronous | 2.7V | 1.91mm | 5.35mm | 5.4mm | 无 | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C010-20DM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 通孔 | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | -55°C~125°C TC | Tube | 活跃 | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 200GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 200ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 42.2mm | 15.24mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS63LV1024L-10HL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | 32 | Volatile | 0°C~70°C TA | Tray | e3 | yes | 最后一次购买 | 2 (1 Year) | 32 | Matte Tin (Sn) - annealed | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 32 | 3.3V | 3.6V | 3V | 1Mb 128K x 8 | 1 | 150mA | SRAM | Parallel | 3-STATE | 8 | 10ns | 17b | 1 Mb | COMMON | Asynchronous | 8b | 2V | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS42S16320F-7TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | yes | 活跃 | 3 (168 Hours) | 54 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 3.3V | 3.6V | 3V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | 16 | 13b | 512 Mb | 1.2mm | 22.22mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29PL064J70BAI120 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-VFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | PL-J | e0 | Obsolete | 3 (168 Hours) | 48 | Tin/Lead (Sn/Pb) | 上下靴块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 240 | 1 | 3V | 0.8mm | 30 | 不合格 | 3.6V | 3/3.3V | 2.7V | 64Mb 4M x 16 | ASYNCHRONOUS | 0.07mA | FLASH | Parallel | 4MX16 | 16 | 70ns | 0.000005A | 67108864 bit | 70 ns | 3V | YES | YES | YES | 16126 | 4K32K | 8words | YES | BOTTOM/TOP | YES | 1mm | 8.15mm | 6.15mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC080A-E/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC512T-I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 24LC512 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 512Kb 64K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1mm | 6mm | 5mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C199D-10VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e4 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY7C199 | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 80mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 10ns | 15b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 2V | 3.556mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1265KV18-450BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1265 | 165 | 1.8V | 1.9V | 1.7V | 36Mb 1M x 36 | 2 | 1.02A | 450MHz | 450 ps | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 18b | 36 Mb | 0.33A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BR24S16NUX-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | 8 | 不合格 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 16 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010MMMR | 0.6mm | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1079DV33-12BAXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 1996 | 活跃 | 3 (168 Hours) | 48 | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.75mm | CY7C1079 | 3.3V | 3.6V | 3V | 32Mb 4M x 8 | 1 | 250mA | SRAM | Parallel | 4MX8 | 3-STATE | 8 | 12ns | 22b | 32 Mb | 0.05A | COMMON | Asynchronous | 8b | 2V | 9.5mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C256F-15FM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 表面贴装 | 表面贴装 | 28-CFlatPack | 28 | Non-Volatile | -55°C~125°C TC | Tube | 1997 | e0 | no | 活跃 | 3 (168 Hours) | 28 | 锡铅 | 自动写入 | 4.5V~5.5V | DUAL | 240 | 1 | 5V | 1.27mm | 150GHz | 30 | AT28C256 | 不合格 | 5V | 5V | Parallel, SPI | 256Kb 32K x 8 | 50mA | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 32KX8 | 3-STATE | 8 | 3ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 3ms | YES | YES | 64words | 3.02mm | 10.16mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | CY7C136E-55NXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-BQFP | 52 | Volatile | 0°C~70°C TA | Tray | 2011 | e3 | yes | Obsolete | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.65mm | 20 | 52 | 5V | 5V | 16Kb 2K x 8 | 2 | 160mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 22b | 16 kb | 0.015A | 55 ns | COMMON | Asynchronous | 8b | 10mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62147EV30LL-45ZSXAT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e4 | yes | Discontinued | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 20 | CY62147 | 3V | 3.6V | 2.2V | 4Mb 256K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 18b | 4 Mb | 0.000007A | 45 ns | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 34LC02T-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.2V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | 34LC02 | 8 | 5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | R1LP0108ESN-7SI#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 32-SOIC (0.450, 11.40mm Width) | YES | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | yes | 不用于新设计 | 1 (Unlimited) | 32 | 4.5V~5.5V | DUAL | 1 | 5V | 32 | 5V | 1Mb 128K x 8 | 1 | ASYNCHRONOUS | SRAM | Parallel | 8 | 70ns | 17b | 1 Mb | 70 ns | 3.05mm | 20.75mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29AS016J70BHI040 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | AS-J | 活跃 | 3 (168 Hours) | 48 | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 1.8V | 1.95V | 1.65V | 16Mb 2M x 8 1M x 16 | ASYNCHRONOUS | FLASH | Parallel | 1MX16 | 16 | 70ns | 20b | 16 Mb | 70 ns | 8 | BOTTOM | 1mm | 8.15mm | ROHS3 Compliant |