类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | CY7C199-35PC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 28-DIP (0.300, 7.62mm) | 28 | Volatile | 0°C~70°C TA | Tube | 2001 | e0 | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 35GHz | CY7C199 | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 140mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 35ns | 15b | 256 kb | 35 ns | COMMON | 8b | YES | 4.826mm | 35.4965mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT93C86A-10PU-1.8 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 2.7V | 2.54mm | AT93C86A | 5V | Serial | 16Kb 2K x 8 1K x 16 | 2mA | 2MHz | 250 ms | EEPROM | SPI | 1KX16 | 16 | 10ms | 16 kb | 1e-7A | PARALLEL | MICROWIRE | 1000000 Write/Erase Cycles | 10ms | 100 | SOFTWARE | 8 | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2270KV18-400BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C2270 | 165 | 1.8V | 36Mb 1M x 36 | 1 | 690mA | 400MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 36 Mb | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26WF016BAT-104I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 8542.32.00.51 | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | SST26WF016 | R-PDSO-G8 | 1.8V | 1.95V | 1.65V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 16MX1 | 1 | 1.5ms | 16 Mb | TS 16949 | 256B | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C136-55JXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 52-LCC (J-Lead) | 52 | Volatile | 0°C~70°C TA | Tray | 2003 | e3 | Obsolete | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | unknown | 55GHz | 20 | CY7C136 | 52 | 不合格 | 5V | 5V | 16Kb 2K x 8 | 2 | 110mA | SRAM | Parallel | 3-STATE | 55ns | 22b | 16 kb | 0.015A | 55 ns | COMMON | Asynchronous | 8b | 3.68mm | 19.2mm | 19.2mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT27LV020A-12JU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | yes | 活跃 | 2 (1 Year) | 32 | Matte Tin (Sn) - annealed | ALSO OPERATES AT 5V SUPPLY | 3V~3.6V 4.5V~5.5V | QUAD | 245 | 1 | 3.3V | 1.27mm | 120GHz | 40 | AT27LV020 | 5V | 3.6V | 3V | 2Mb 256K x 8 | 25mA | 120ns | EPROM | Parallel | 256KX8 | 3-STATE | 8 | 2 Mb | 0.00002A | COMMON | 3.556mm | 13.97mm | 11.43mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC64-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC64 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C199NL-15ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | 28 | Volatile | 0°C~70°C TA | Tray | 2003 | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.55mm | 20 | CY7C199 | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 100mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 15ns | 15b | 256 kb | COMMON | Asynchronous | 8b | 2V | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT28EW01GABA1HJS-0SIT | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | e3 | 活跃 | 3 (168 Hours) | 56 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | R-PDSO-G56 | 3.6V | 2.7V | 1Gb 128M x 8 64M x 16 | ASYNCHRONOUS | 95ns | FLASH | Parallel | 64MX16 | 16 | 60ns | 1073741824 bit | 3V | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93AA46BT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | 93AA46B | 8 | 5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 6ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA02H-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 不适用 | 8 | EAR99 | 1.7V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 24AA02H | 8 | 2.5V | 5.5V | 2/5V | 1.7V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 4.953mm | 10.16mm | 7.112mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46B/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2001 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.635mm | 40 | 93C46B | 8 | 5V | 5V | 2-Wire, Serial | 1Kb 64 x 16 | 2mA | 2MHz | 6 ms | EEPROM | SPI | 3-STATE | 2ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.05mm | 4.5mm | 3.1mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGMFVR00 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2007 | FL-S | 活跃 | 3 (168 Hours) | 16 | 3A991.B.1.A | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 64MX4 | 4 | 0.0003A | 268435456 bit | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62177DV30LL-55BAXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e1 | yes | Obsolete | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 20 | CY62177 | 48 | 3V | 3.6V | 2.2V | 32Mb 2M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 21b | 32 Mb | 0.000025A | 18MHz | 55 ns | COMMON | Asynchronous | 16b | 9.5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA64-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | 活跃 | 1 (Unlimited) | 1.7V~5.5V | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA64 | 5.5V | 1.7V | I2C, Serial | 64Kb 8K x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 64KX1 | 1 | 5ms | 64 kb | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA64FT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 24AA64F | 8 | 5V | 1.7V | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 2mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1460AV25-167AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 20 | CY7C1460 | 100 | 2.5V | 2.625V | 2.375V | 36Mb 1M x 36 | 4 | 335mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | 0.12A | COMMON | Synchronous | 36b | 2.38V | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2665KV18-550BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tube | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 40 | CY7C2665 | 165 | 1.8V | 1.9V | 1.7V | 144Mb 4M x 36 | 2 | 1.52A | 550MHz | 450 ps | SRAM | Parallel | 4MX36 | 3-STATE | 36 | 20b | 144 Mb | 0.5A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 17mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25V01-GTR | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | F-RAM™ | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 2V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 20 | FM25V01 | 8 | 3.3V | 3.6V | 2V | SPI, Serial | 128Kb 16K x 8 | 2.5mA | 40MHz | 9 ns | FRAM | SPI | 8b | 8 | 128 kb | 0.00015A | 8b | 1.75mm | 4.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064N11FFIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 1997 | GL-N | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 1.8/3.33/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | FLASH | Parallel | 4MX16 | 16 | 110ns | 64 Mb | 0.000005A | 110 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.4mm | 13mm | 11mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R3235FZBIL0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-UDFN Exposed Pad | YES | USON-8-4x3mm | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2017 | 活跃 | 8 | IT IS ALSO CONFIGURED AS 32M X 1 | 1.65V~3.6V | DUAL | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | R-PDSO-N8 | 3.6V | 1.65V | 32Mb 4M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 8MX4 | 4 | 100μs, 10ms | 33554432 bit | SERIAL | 1.8V | 2 | 85°C | 600μm | 4mm | 3mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16160G-7TL-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Commercial grade | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 54 | 3V~3.6V | DUAL | 3.3V | 0.8mm | 3.3V | 256Mb 16M x 16 | 130mA | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15b | 256 Mb | 0.004A | COMMON | 8192 | 1248FP | 1248 | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 23A1024-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.7V~2.2V | DUAL | 260 | 1 | 0.65mm | 40 | 23A1024 | R-PDSO-G8 | 不合格 | 2.2V | 1.8/2V | 1.7V | 1Mb 128K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 128KX8 | 3-STATE | 8 | 0.000012A | 1048576 bit | 32 ns | SERIAL | COMMON/SEPARATE | 1.7V | NO | NO | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1357C-100AXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | 100-TQFP (14x20) | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2003 | NoBL™ | Obsolete | 3 (168 Hours) | 70°C | 0°C | 3.135V~3.6V | 100MHz | CY7C1357 | 3.3V | Parallel | 3.6V | 3.135V | 9Mb 512K x 18 | 2 | 180mA | 100MHz | 7.5ns | SRAM | Parallel | 19b | 9 Mb | 100MHz | Synchronous | 18b | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | NAND512W3A2SZA6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 63-TFBGA | 63 | Non-Volatile | -40°C~85°C TA | Tray | 2004 | e2 | Obsolete | 3 (168 Hours) | 63 | 3A991.B.1.A | Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni) | 8542.32.00.51 | 3V | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 30 | NAND512 | 3V | 512Mb 64M x 8 | 20mA | FLASH | Parallel | 64MX8 | 8 | 50ns | 26b | 512 Mb | 0.00005A | 35 ns | Asynchronous | 8b | NO | NO | YES | 4K | 16K | 512B | YES | 1.05mm | 11mm | 无 | ROHS3 Compliant |