类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | 25AA080C-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25AA080C | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25C040-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 25C040 | 8 | 5V | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.953mm | 10.16mm | 7.112mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1360C-200AJXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1360 | 100 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 220mA | 200MHz | 3ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CYDM064B16-55BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-VFBGA | 100 | Volatile | -40°C~85°C TA | Tray | 2005 | e1 | yes | Obsolete | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V 2.4V~2.6V 2.7V~3.3V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 20 | CYDM | 100 | 1.8V | 1.9V | 1.8/3V | 1.7V | 64Kb 4K x 16 | 2 | 25mA | SRAM | Parallel | 4KX16 | 3-STATE | 16 | 55ns | 24b | 64 kb | 0.000006A | 55 ns | COMMON | Asynchronous | 16b | 1.7V | 1mm | 6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C32D-XPD-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 2.5V~5.5V | DUAL | 1 | 3V | 0.65mm | 5.5V | 2.5V | I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 1MHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 400kHz | I2C | 5ms | 1.2mm | 4.4mm | 3mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1512V18-200BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 5 (48 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | unknown | 20 | CY7C1512 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 800mA | 200MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 22b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29W160ET70ZA6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Copper, Silver, Tin | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 1998 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | SMD/SMT | EAR99 | 锡银铜 | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 30 | M29W160 | 48 | 3/3.3V | 2.7V | 16Mb 2M x 8 1M x 16 | 10mA | FLASH | Parallel | 1MX16 | 16 | 70ns | 16 Mb | 0.0001A | 70 ns | Asynchronous | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 8mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SDSMFI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2015 | FL-S | 活跃 | 3 (168 Hours) | 16 | ALSO CONFIGURABLE AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O | 32MX8 | 8 | 268435456 bit | 3V | 500ms | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC010AT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | R1LV0108ESN-5SI#B0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.450, 11.40mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | 2013 | yes | 最后一次购买 | 3 (168 Hours) | 32 | 2.7V~3.6V | DUAL | 32 | 不合格 | 3V | 1Mb 128K x 8 | 1 | 25mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 17b | 1 Mb | 0.000002A | 55 ns | COMMON | Asynchronous | 8b | 2V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST38VF6404-90-5I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST38 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST38VF6404 | 48 | 3.3V | 3.6V | 2.7V | 64Mb 4M x 16 | 18mA | 90ns | FLASH | Parallel | 16b | 4MX16 | 16 | 10μs | 22b | 64 Mb | 0.00003A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 4K | 4words | YES | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| 93LC66CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66C | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | IS62C51216AL-55TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP II | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 85°C | -40°C | 4.5V~5.5V | Parallel | 5.5V | 4.5V | 8Mb 512K x 16 | 55ns | SRAM | Parallel | 55ns | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC512-M/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -55°C~125°C TA | Tube | 2010 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC512 | 5.5V | 2.5V | SPI, Serial | 512Kb 64K x 8 | 20MHz | 50 ns | EEPROM | SPI | 512KX1 | 1 | 5ms | 512 kb | TS 16949 | SPI | 5ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V416S15PHGI8 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 3V~3.6V | IDT71V416 | 4Mb 256K x 16 | 15ns | SRAM | Parallel | 15ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T128NUX-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 0.5mm | 未说明 | BR24T128 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 0.6mm | 3mm | 2mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29F040CQC-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | MX29F | e3 | yes | 不用于新设计 | 3 (168 Hours) | 32 | 3A991.B.1.A | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 1.27mm | 40 | 32 | 不合格 | 5V | 5V | 4Mb 512K x 8 | ASYNCHRONOUS | FLASH | Parallel | 512KX8 | 8 | 70ns | 4 Mb | 0.000005A | 70 ns | 5V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 3.55mm | 14.05mm | 11.43mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC024/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 24LC024 | 8 | 5.5V | 2.2/5.5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 10ms | 200 | HARDWARE | 1010DDDR | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
| SST25PF040C-40V/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | SST25 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.3V~3.6V | DUAL | 1 | 3.3V | 1.27mm | SST25PF040C | R-PDSO-G8 | 3.6V | 2.3V | 4Mb 512K x 8 | SYNCHRONOUS | 40MHz | 0.015mA | FLASH | SPI | 4MX1 | 1 | 5ms | 0.00001A | 4194304 bit | SERIAL | 3.3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USBF129-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 8542.32.00.71 | 2.7V~3.6V | DUAL | 1 | 1.27mm | USBF129 | R-PDSO-G8 | 3.6V | 2.7V | 4Mb 512K x 8 | SYNCHRONOUS | 30MHz | FLASH | SPI | 512KX8 | 8 | 5ms | 4194304 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1550KV18-400BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 20 | CY7C1550 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 750mA | 400MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 20b | 72 Mb | 0.32A | COMMON | Synchronous | 36b | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24CS32-MAHM-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | yes | 活跃 | 3 (168 Hours) | 1.7V~5.5V | AT24CS32 | 2-Wire, I2C, Serial | 32Kb 4K x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 32 kb | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC024/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24LC024 | 8 | 5.5V | 2.2/5.5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 10ms | 200 | HARDWARE | 1010DDDR | 1.5mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| S25FL256SAGMFV003 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 64MX4 | 4 | 0.0003A | 268435456 bit | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV102416BLL-25MLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 2 (1 Year) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.65V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | 48 | 3.6V | 2.5/3.3V | 2.4V | 16Mb 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 25ns | 20b | 16 Mb | 25 ns | COMMON | Asynchronous | 16b | 2.4V | 无 | ROHS3 Compliant |