类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 最高频率 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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IS25LQ010B-JNLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Bulk | e3 | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 2.3V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 2.3V | SPI, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 1MX1 | 1 | 800μs | 3V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
M24512-WMW6G | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | M24512 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 512Kb 64K x 8 | 5mA | 1MHz | 500ns | EEPROM | I2C | 10ms | 512 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 2mm | 6.05mm | 6.22mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
34AA02-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2001 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 34AA02 | 8 | 不合格 | 5V | 1.7V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
S29GL256S11FHIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 256Mb 16M x 16 | 0.08mA | 110ns | FLASH | Parallel | 16MX16 | 16 | 60ns | 24b | 256 Mb | 0.0001A | 2.7V | YES | YES | YES | 256 | 64K | 32B | YES | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
93LC76C-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC76C | 8 | 5.5V | 3/5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
S25FL032P0XMFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | FL-P | Obsolete | 3 (168 Hours) | 3A991.B.1.A | 2.7V~3.6V | SPI, Serial | 32Mb 4M x 8 | 38mA | 104MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 5μs, 3ms | 1b | 32 Mb | Synchronous | 8b | 256B | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29AS008J70BFI030 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | AS-J | e3 | Obsolete | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 1.8V | 1.95V | 1.65V | 8Mb 1M x 8 512K x 16 | 12mA | FLASH | Parallel | 8b | 512KX16 | 16 | 70ns | 8 Mb | 0.00003A | 70 ns | Asynchronous | 8 | YES | YES | YES | 815 | 8K64K | YES | TOP | YES | 0.8mm | 8.15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
93AA56AX-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA56A | 8 | 5.5V | 2/5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
IDT71V256SA15PZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 3V~3.6V | IDT71V256 | 256Kb 32K x 8 | SRAM | Parallel | 15ns | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62137EV30LL-45ZSXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2001 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62137 | 3V | 3.6V | 2.2V | 2Mb 128K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 17b | 2 Mb | 0.000003A | 45 ns | COMMON | Asynchronous | 16b | 1V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1069AV33-10ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | 0°C~70°C TA | Tray | 1996 | e3 | Obsolete | 3 (168 Hours) | 54 | SMD/SMT | Matte Tin (Sn) | AUTOMATIC POWER-DOWN | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 1MHz | 20 | CY7C1069 | 54 | 3.3V | 3.6V | 3V | 16Mb 2M x 8 | 1 | 275mA | 275mA | SRAM | Parallel | 2MX8 | 3-STATE | 8 | 10ns | 21b | 16 Mb | 0.05A | COMMON | Asynchronous | 8b | 3V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
N64S830HAS22IT | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 2.7V~3.6V | DUAL | 1 | 3V | 8 | 3V | 3.6V | 2.5V | SPI, Serial | 64Kb 8K x 8 | 1 | 20MHz | SRAM | SPI | 3-STATE | 8 | 16b | 512 kb | 0.000004A | SEPARATE | 4.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1021D-10VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 44-BSOJ (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY7C1021 | 5V | 5V | 1Mb 64K x 16 | 1 | 80mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 16b | 1 Mb | 0.003A | 100MHz | COMMON | Asynchronous | 16b | 2V | 3.7592mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
93C66CT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2005 | e3 | yes | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66C | 8 | 5V | 5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 2ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1mm | 3mm | 2.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
CY62138EV30LL-45BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 36-VFBGA | 36 | Volatile | -40°C~85°C TA | Tray | 2003 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 1MHz | 30 | CY62138 | 48 | R-PBGA-B48 | 3V | 3.6V | 2.2V | 2Mb 256K x 8 | 1 | 20mA | SRAM | Parallel | 256KX8 | 3-STATE | 45ns | 18b | 2 Mb | 0.000003A | 45 ns | COMMON | Asynchronous | 8b | 1V | 210μm | 8mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
IS61WV25616BLL-10BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 48 | 2.4V~3.6V | BOTTOM | 0.75mm | 2.5/3.3V | 4Mb 256K x 16 | 1 | 45mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | 0.009A | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
11LC010T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11LC010 | 8 | 5V | Serial | 1Kb 128 x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 1 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
24FC64F-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | NOT APPLICABLE | 1 | 2.54mm | NOT APPLICABLE | 24FC64F | 不合格 | 5.5V | 2/5V | 1.7V | I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
24AA025UID-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | 活跃 | 不适用 | Matte Tin (Sn) - annealed | 1.7V~5.5V | 24AA025UID | 2-Wire, I2C, Serial | 2Kb 128 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 2 kb | I2C | 3.68mm | 9.78mm | 6.6mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
93AA46AXT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA46A | 8 | 5.5V | 2/5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
BU9832GUL-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 8-UFBGA, CSPBGA | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | BOTTOM | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | BU9832 | 8 | 不合格 | 5.5V | 2/5V | SPI, Serial | 8Kb 1K x 8 | SYNCHRONOUS | 5MHz | 70 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 0.55mm | 2.09mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
93LC76CT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC76C | 8 | 5.5V | 3/5V | 2.5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
IS42S16160G-7BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 54-TFBGA | YES | 54 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e1 | 活跃 | 3 (168 Hours) | 54 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 10 | 不合格 | 3.6V | 3.3V | 3V | 256Mb 16M x 16 | 1 | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 0.004A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
CY7C199D-10VXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | 28 | Volatile | -40°C~85°C TA | Tube | 2003 | e4 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 30 | CY7C199 | 28 | 5V | 5V | 256Kb 32K x 8 | 1 | 80mA | 80mA | SRAM | Parallel | 32KX8 | 3-STATE | 10ns | 15b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 2V | 3.556mm | 18.11mm | 7.62mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
93C46AT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C46A | 8 | 5V | 5V | Serial | 1Kb 128 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 |