类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 自我刷新 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||||||||||||||||||||
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 | SST39SF020A-55-4C-NHE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2010 | SST39 MPF™ | e3 | yes | 活跃 | 3 (168 Hours) | 32 | 3A991.B.1.A | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 245 | 1 | 5V | 1.27mm | 40 | SST39SF020A | 32 | 5V | 5V | 2Mb 256K x 8 | 25mA | 55ns | FLASH | Parallel | 8b | 256KX8 | 8 | 20μs | 18b | 2 Mb | 0.0001A | Asynchronous | 8b | 5V | YES | YES | YES | 64 | 4K | 3.556mm | 13.97mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGMFAG00 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | FL-S | 活跃 | 3 (168 Hours) | 16 | ALSO CONFIGURABLE AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 64MX4 | 4 | 268435456 bit | AEC-Q100 | 3V | 500ms | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | MT48LC8M16A2F4-75:G | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 8000000 | PLASTIC/EPOXY | BGA54,9X9,32 | 30 | 5.4 ns | 70 °C | 无 | MT48LC8M16A2F4-75:G | 133 MHz | 8388608 words | 3.3 V | VFBGA | SQUARE | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.63 | BGA | YES | 54 | 8 X 8 MM, VFBGA-54 | e0 | EAR99 | Tin/Lead/Silver (Sn/Pb/Ag) | AUTO/SELF REFRESH | 8542.32.00.02 | DRAMs | CMOS | BOTTOM | BALL | 235 | 1 | 0.8 mm | unknown | 54 | S-PBGA-B54 | 不合格 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.31 mA | 8MX16 | 3-STATE | 1 mm | 16 | 0.002 A | 134217728 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 8 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA02HT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA02H | 8 | 2.5V | 5.5V | 2/5V | 1.7V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1380D-200AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2002 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1380 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 300mA | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C25632KV18-550BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2014 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C25632 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 920mA | 550MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 20b | 72 Mb | 0.38A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL256SAGMFIR00 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 256Mb 32M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 64MX4 | 4 | 1b | 256 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC08BHT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC08BH | 8 | 5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF064B-104V/MN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~105°C TA | Tray | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST26VF064 | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 64 Mb | 3V | 256B | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C16-DRMN8TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 未说明 | 1 | 2.5V | 1.27mm | 未说明 | M24C16 | 不合格 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8 | 4ms | 0.000001A | I2C | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE | 1010MMMR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF512-20-4C-SAE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST25 | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1.27mm | SST25VF512-20 | 3.3V | SPI, Serial | 512Kb 64K x 8 | 10mA | 20MHz | 20 ns | FLASH | SPI | 8b | 8 | 20μs | 1b | 512 kb | 0.000015A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC128-E/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 24LC128 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 128Kb 16K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24128-DFCS6TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-UFBGA, WLCSP | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | BOTTOM | 1 | 0.4mm | M24128 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | 2.5mA | 1MHz | 450ns | EEPROM | I2C | 5ms | 128 kb | 0.000001A | I2C | 4000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 350μm | 1.27mm | 1.081mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W9864G6KH-6I | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 2016 | 活跃 | 3 (168 Hours) | 54 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | R-PDSO-G54 | 3.6V | 3V | 64Mb 4M x 16 | 1 | SYNCHRONOUS | 166MHz | 5ns | DRAM | Parallel | 4MX16 | 16 | 67108864 bit | 1.2mm | 22.22mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC320AT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25LC320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1312KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1312 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 640mA | 300MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S70GL02GS11FHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-S | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.71 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 2Gb 128M x 16 | 60mA | 110ns | FLASH | Parallel | 16b | 128MX16 | 16 | 27b | 2 Gb | 0.0002A | Asynchronous | 3V | 8 | YES | YES | YES | 2K | 128K | 16/32words | YES | BOTTOM/TOP | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST25VF020B-80-4I-QAE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | SST25 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST25VF020B | 3.3V | 3.6V | 2.7V | SPI, Serial | 2Mb 256K x 8 | 20mA | 80MHz | 6 ns | FLASH | SPI | 8b | 8 | 10μs | 1b | 2 Mb | 0.00002A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC160C-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160C | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62138FV30LL-45SXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | 2003 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 30 | CY62138 | 32 | 3V | 3.6V | 2.2V | 2Mb 256K x 8 | 1 | 18mA | SRAM | Parallel | 256KX8 | 3-STATE | 8 | 45ns | 18b | 2 Mb | 0.000004A | 22MHz | 45 ns | COMMON | Asynchronous | 8b | 2.997mm | 20.4465mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56A-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | yes | 活跃 | 不适用 | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 93C56A | 8 | 5V | 5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021CV33-15ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | 0°C~70°C TA | Tray | 1996 | e4 | Obsolete | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | unknown | 15GHz | 20 | CY7C1021 | 44 | 不合格 | 3.3V | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 80mA | SRAM | Parallel | 3-STATE | 16 | 15ns | 16b | 1 Mb | 0.005A | COMMON | Asynchronous | 16b | 3V | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1470BV25-250AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 40 | CY7C1470 | 100 | 2.5V | 2.625V | 2.375V | 72Mb 2M x 36 | 4 | 450mA | 250MHz | 3ns | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 2.38V | 1.6mm | 20mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1361C-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2003 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1361 | 100 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 250mA | 133MHz | 6.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62148ESL-55ZAXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | 2003 | MoBL® | e4 | Obsolete | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | IT ALSO OPERATES AT 5V SUPPLY | 2.2V~3.6V 4.5V~5.5V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | CY62148 | 32 | 3.6V | 2.5/3.3/5V | 2.2V | 4Mb 512K x 8 | 1 | 20mA | 2mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 0.000007A | 55 ns | COMMON | Asynchronous | 8b | 无 | ROHS3 Compliant | 无铅 |