类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | AT28C010-12LM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 表面贴装 | 表面贴装 | 44-CLCC | 44 | Non-Volatile | -55°C~125°C TC | Tube | 1998 | e0 | 活跃 | 1 (Unlimited) | 44 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 8542.32.00.51 | 4.5V~5.5V | QUAD | 1 | 5V | 1.27mm | 120GHz | AT28C010 | 5V | 5V | 1Mb 128K x 8 | 80mA | 120ns | EEPROM | Parallel | 128KX8 | 3-STATE | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 | 5V | 10000 Write/Erase Cycles | 10ms | YES | YES | NO | 128words | 2.74mm | 16.55mm | 16.55mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | 24LC02BH-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.65mm | 40 | 24LC02BH | 8 | 不合格 | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA66CT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 93AA66C | 8 | 5.5V | 2/5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC08BHT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 24LC08BH | 8 | 5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC080-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 1 | 3.3V | 2.54mm | 25LC080 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 2MHz | 230 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 10000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43R16320D-6BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 3 (168 Hours) | 60 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.28 | 2.3V~2.7V | BOTTOM | 260 | 1 | 2.5V | 1mm | 40 | 60 | 2.5V | 2.7V | 2.3V | 512Mb 32M x 16 | 1 | 370mA | 166MHz | 700ps | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 15ns | 15b | 512 Mb | 0.025A | COMMON | 8192 | 248 | 248 | 1.2mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | MB85RC1MTPNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOP | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 1.8V~3.6V | 1Mb 128K x 8 | 3.4MHz | 130ns | FRAM | I2C | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC160CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160C | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G256FVT-3GE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | BR24G256 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 256 kb | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LPS25636A-200TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | YES | 100 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 流水线结构 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 10 | 100 | 3.3V | 3.135V | 9Mb 256K x 36 | 4 | 275mA | 200MHz | 3.1ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.105A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C56B-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 不适用 | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 93C56B | 8 | 5V | 5V | Serial | 2Kb 128 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 16 | 2ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N90FFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | GL-N | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 16b | 2MX16 | 16 | 90ns | 8 b | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 64 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.4mm | 13mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | THGBMHG8C2LBAIL | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 153-WFBGA | Non-Volatile | -25°C~85°C TA | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | 2.7V~3.6V | 256Gb 32G x 8 | 52MHz | FLASH | eMMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA320AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 25AA320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF401C-70-4I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 40 | SST39VF401C | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 18mA | 70ns | FLASH | Parallel | 256KX16 | 10μs | 1b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | BOTTOM | YES | 750μm | 8mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| 24LC01BH-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 24LC01BH | 8 | 不合格 | 5V | 2-Wire, Serial | 1Kb 128 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF1601-70-4I-MAQE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | 活跃 | 3 (168 Hours) | 48 | 1.65V~1.95V | BOTTOM | 1.8V | 0.5mm | SST39WF1601 | 1.8V | 16Mb 1M x 16 | 10mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 40μs | 20b | 16 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | BOTTOM | YES | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1440KV33-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2014 | 活跃 | 3 (168 Hours) | 165 | 3A991.B.2.A | 流水线结构 | 8542.32.00.41 | 3.135V~3.6V | BOTTOM | 1 | 3.3V | 1mm | 3.6V | 3.135V | 36Mb 1M x 36 | 250MHz | 2.6ns | SRAM | Parallel | 1MX36 | 36 | 37748736 bit | 1.4mm | 17mm | 15mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C86CT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C86C | 8 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 1KX16 | 16 | 2ms | 16 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV25320VE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Automotive grade | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | SPI, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 10MHz | 35 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000004A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| 93LC66B-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93LC66B | 8 | 5.5V | 3/5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | AT93C56A-10SU-1.8 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 250kHz | AT93C56A | 5V | Serial | 5.5V | 1.8V | 2Kb 256 x 8 128 x 16 | 2mA | 2MHz | 250 ms | EEPROM | SPI | 10ms | 2 kb | 250kHz | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1314KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1314 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 2 | 670mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 18b | 18 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S34MS01G200BHI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 63-VFBGA | 63 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | MS-2 | Discontinued | 3 (168 Hours) | 63 | 8542.32.00.51 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | 1.8V | 1.95V | 1.7V | 1Gb 128M x 8 | FLASH | Parallel | 128MX8 | 8 | 45ns | 28b | 1 Gb | 2kB | 1mm | 11mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 47L16T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 2K X 8 BITS | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 47L16 | R-PDSO-G8 | 3.6V | 2.7V | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 2KX8 | 8 | 1ms | 16384 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant |