类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SST25VF040B-80-4I-SAE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1998 | SST25 | e3 | Obsolete | 3 (168 Hours) | 8 | 哑光锡 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 0.55mm | 40 | SST25VF040B | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 20mA | 80MHz | 8 ns | FLASH | SPI | 8b | 4MX1 | 1 | 10μs | 1b | 4 Mb | 0.00015A | TS 16949 | Synchronous | 8b | 2.7V | 100000 Write/Erase Cycles | 10ms | YES | YES | 64words | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
 | BR24L04FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn/Cu) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | 8 | 5V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDMR | 1.775mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
.png) | LE25S161PCTXG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-UDFN Exposed Pad | YES | Non-Volatile | -40°C~90°C TA | Tape & Reel (TR) | 2009 | yes | 活跃 | 2 (1 Year) | 8 | 1.65V~1.95V | DUAL | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | R-PDSO-N8 | 1.95V | 1.65V | 16Mb 2M x 8 | SYNCHRONOUS | 70MHz | FLASH | SPI | 2MX8 | 8 | 700μs | 16777216 bit | SERIAL | 1.8V | 0.6mm | 4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 34AA04-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 2.2V | 0.65mm | 40 | 34AA04 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | 1.5mA | SYNCHRONOUS | 1MHz | 350ns | EEPROM | I2C | 8 | 5ms | 4 kb | TS 16949 | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1350G-133AXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1998 | NoBL™ | e4 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1350 | 3.3V | 3.6V | 3.135V | 4.5Mb 128K x 36 | 4 | 225mA | 133MHz | 4ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | S29AL008J70TFN010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~125°C TA | Tray | 2012 | AL-J | e3 | 活跃 | 3 (168 Hours) | 48 | EAR99 | 哑光锡 | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3.3V | 2.7V | 8Mb 1M x 8 512K x 16 | 0.012mA | FLASH | Parallel | 512KX16 | 16 | 70ns | 8 Mb | 0.000005A | 70 ns | 3V | 8 | YES | YES | YES | 12115 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
 | S25FS512SDSBHV213 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | FS-S | 活跃 | 3 (168 Hours) | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1.7V~2V | BOTTOM | 未说明 | 1 | 1.8V | 1mm | 未说明 | 2V | 1.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | 1.8V | 2 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C010-25DM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 通孔 | 32-CDIP (0.600, 15.24mm) | 32 | Non-Volatile | -55°C~125°C TC | Tube | 活跃 | 1 (Unlimited) | 32 | 3A001.A.2.C | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 250GHz | AT28C010 | 5V | 1Mb 128K x 8 | 80mA | 250ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 10ms | 10 | HARDWARE/SOFTWARE | YES | YES | NO | 128words | 5.72mm | 42.2mm | 15.24mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C512-10PU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 8-DIP (0.300, 7.62mm) | 8-PDIP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 2.7V~5.5V | AT24C512 | 512Kb 64K x 8 | 1MHz | 900ns | EEPROM | I2C | 10ms | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C32-DRDW3TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 2.5V | 0.65mm | M24C32 | 5.5V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | 1MHz | 450ns | EEPROM | I2C | 8 | 4ms | 32 kb | I2C | 4ms | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R6435FZAIH0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-UDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2017 | MXSMIO™ | yes | 活跃 | 3 (168 Hours) | 8 | ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT | 1.65V~3.6V | DUAL | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | S-PDSO-N8 | 3.6V | 1.65V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 16MX4 | 4 | 100μs, 4ms | 67108864 bit | 1.8V | 2 | 0.6mm | 4mm | 4mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C16-DRMF3TG/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-WFDFN Exposed Pad | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 未说明 | M24C16 | R-PDSO-N8 | 5.5V | 1.8V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 2KX8 | 8 | 4ms | 16384 bit | I2C | 4ms | 0.8mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62148EV30LL-45BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 36-VFBGA | 36 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | MoBL® | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 45GHz | 20 | CY62148 | 3V | 3.6V | 2.2V | 4Mb 512K x 8 | 1 | 20mA | SRAM | Parallel | 3-STATE | 8 | 45ns | 19b | 4 Mb | 0.000007A | 45 ns | COMMON | Asynchronous | 8b | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY62167EV30LL-45BVI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e0 | no | 活跃 | 3 (168 Hours) | 48 | Tin/Lead (Sn/Pb) | IT ALSO OPERATES AT 2.2V TO 3.6V | 2.2V~3.6V | BOTTOM | 235 | 1 | 3V | 0.75mm | 20 | CY62167 | 48 | 3V | 3.6V | 2.2V | 16Mb 2M x 8 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 20b | 16 Mb | 45 ns | COMMON | Asynchronous | 8 | 8mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1312KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1312 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 560mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV1288DBLL-45QLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 32 | EAR99 | 哑光锡 | 2.3V~3.6V | DUAL | 260 | 1 | 3.3V | 40 | 32 | 不合格 | 3.6V | 2.5/3.3V | 2.3V | 1Mb 128K x 8 | 1 | 8mA | SRAM | Parallel | 3-STATE | 8 | 45ns | 17b | 1 Mb | 0.000004A | 45 ns | COMMON | Asynchronous | 8b | 20.495mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL164K0XMFB010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2013 | Automotive, AEC-Q100, FL1-K | Obsolete | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | 0.025mA | FLASH | SPI - Quad I/O | 8MX8 | 8 | 3ms | 0.00001A | 67108864 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 23K256-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Volatile | -40°C~125°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 40 | 23K256 | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 256Kb 32K x 8 | 1 | 10mA | 20MHz | 32 ns | SRAM | SPI | 3-STATE | 1b | 256 kb | 0.000004A | SEPARATE | Synchronous | 8b | 2.7V | 1.5mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| 24LC04BH-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 2.54mm | 24LC04BH | 8 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | 0.000005A | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 5.334mm | 9.271mm | 6.35mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | 25LC256T-E/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 25LC256 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 256Kb 32K x 8 | 6mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 256 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1mm | 5.99mm | 4.92mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | IS43TR16256AL-125KBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 96-TFBGA | 96 | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | Tin/Silver/Copper (Sn/Ag/Cu) | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1.283V~1.45V | BOTTOM | 1 | 1.35V | 0.8mm | 1.35V | 1.45V | 1.283V | 4Gb 256M x 16 | 1 | 261mA | 800MHz | 20ns | DRAM | Parallel | 16b | 256MX16 | 16 | 15ns | 18b | 4 Gb | 1.2mm | 13mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24VL025/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -20°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5V~3.6V | DUAL | 260 | 1 | 1.8V | 0.65mm | 40 | 24VL025 | 8 | 不合格 | 3.3V | 3.6V | 1.5V | 2-Wire, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| S25FL064LABMFM010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tray | 2017 | Automotive, AEC-Q100, FL-L | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) | IT ALSO HAVE X1 MEMORY WIDTH | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC04BH-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2007 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | NOT APPLICABLE | 1 | 2.54mm | NOT APPLICABLE | 24LC04BH | 8 | 不合格 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXMR | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
| 93AA56BX-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA56B | 8 | 5.5V | 2/5V | Serial | 2Kb 128 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 |