类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 逻辑功能 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 时间格式 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | CY62147EV18LL-55BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.65V~2.25V | BOTTOM | 260 | 1 | 1.8V | 0.75mm | 30 | CY62147 | 48 | 1.8V | 2.25V | 4Mb 256K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 18b | 4 Mb | 0.000005A | 55 ns | COMMON | Asynchronous | 16b | 1V | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256S10TFIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-S | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 1.65V~3.6V | DUAL | 1 | 3V | 0.5mm | 3.6V | 3/3.3V | 2.7V | 256Mb 16M x 16 | 60mA | 100ns | FLASH | Parallel | 16b | 32MX8 | 8 | 60ns | 24b | 256 Mb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 256 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021BNV33L-15ZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 1996 | e4 | yes | Obsolete | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 30 | CY7C1021 | 44 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 1 | 160mA | SRAM | Parallel | 3-STATE | 16 | 15ns | 16b | 1 Mb | 67MHz | COMMON | Asynchronous | 16b | 2V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF040B-80-4I-S2AE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | SST25 | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 1.27mm | 40 | SST25VF040B | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 20mA | 80MHz | 8 ns | FLASH | SPI | 8b | 4MX1 | 1 | 10μs | 1b | 4 Mb | 0.00002A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56A-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C56A | 8 | 5V | 5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.5mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1514KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | 最后一次购买 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1514 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 790mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 20b | 72 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B104K-ZS25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2005 | e4 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 44 | 3.3V | 3.6V | 2.7V | 4Mb 512K x 8 | 70mA | Clock | NVSRAM | Parallel | 8b | 512KX8 | 8 | 25ns | 4 Mb | 0.005A | 25 ns | 8b | HH:MM:SS | 1.194mm | 18.415mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C09279V-12AC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | Obsolete | 3 (168 Hours) | 100 | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3V~3.6V | QUAD | 240 | 1 | 3.3V | 0.5mm | 30 | CY7C09279 | 100 | 3.3V | 3.6V | 3V | 512Kb 32K x 16 | 2 | 180mA | 50MHz | 12ns | SRAM | Parallel | 3-STATE | 16 | 15b | 512 kb | COMMON | Synchronous | 16b | 3V | YES | 1.6mm | 14mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA46AE48-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA46A | 5.5V | Serial | 1Kb 128 x 8 | 500μA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 6ms | 1 kb | TS 16949 | 3-WIRE | 1.25mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC46A/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2001 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.635mm | 40 | 93LC46A | 8 | 5.5V | 6V | 3/5V | 2.5V | 2-Wire, Serial | 1Kb 128 x 8 | 2mA | 2MHz | 6 ms | EEPROM | SPI | 8 | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL01GT11FHIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | GL-T | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | R-PBGA-B64 | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | 110ns | FLASH | Parallel | 64MX16 | 16 | 60ns | 1073741824 bit | 2.7V | 1.4mm | 13mm | 11mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 34VL02/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -20°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5V~3.6V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 34VL02 | 8 | 不合格 | 3.3V | 3.6V | 1.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC256T-E/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24LC256 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | I2C, Serial | 256Kb 32K x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 256 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | NO | 1mm | 6mm | 5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY62157EV30LL-55ZXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Volatile | -40°C~125°C TA | Tube | 2011 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | CY62157 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 2.5/3.3V | 2.2V | 8Mb 512K x 16 | SRAM | Parallel | 512KX16 | 3-STATE | 16 | 55ns | 0.00003A | 8388608 bit | 55 ns | COMMON | 1.5V | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV102416BLL-10TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 2.4V~3.6V | 16Mb 1M x 16 | 1 | 95mA | SRAM | Parallel | 10ns | 20b | 16 Mb | Asynchronous | 16b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS25LP016D-JNLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 8542.32.00.51 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 10 | R-PDSO-G8 | 3.6V | 2.3V | 16Mb 2M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 2MX8 | 8 | 800μs | 16777216 bit | SERIAL | 3V | 1 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF016B-75-4I-QAF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | SST25 | e4 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 镍钯金 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST25VF016B | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 16Mb 2M x 8 | 20mA | 80MHz | 6 ns | FLASH | SPI | 8b | 16MX1 | 10μs | 1b | 16 Mb | 0.00002A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 750μm | 6mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G04FJ-3GTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1999 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 1.27mm | 未说明 | BR24G04 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 4096 bit | I2C | 5ms | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC32AT-E/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24LC32A | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1320CV18-167BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1320 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 167MHz | 0.54mA | 450 ps | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 18 Mb | 0.295A | COMMON | 1.7V | 1.4mm | 15mm | 13mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C32M16D2A-25BIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 84-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | 2014 | 活跃 | 3 (168 Hours) | 84 | EAR99 | AUTO/SELF REFRESH | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 0.8mm | R-PBGA-B84 | 不合格 | 1.9V | 1.8V | 1.7V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 400MHz | 0.18mA | 400ps | DRAM | Parallel | 32MX16 | 3-STATE | 16 | 15ns | 0.008A | 536870912 bit | COMMON | 8192 | 48 | 48 | 1.2mm | 12.5mm | 8mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR9040F-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | 活跃 | 1 (Unlimited) | 8 | 2V~5.5V | DUAL | 1 | 5V | 1.27mm | unknown | BR9040 | 不合格 | 5V | 2.7V | Serial | 4Kb 256 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 256X16 | 16 | 10ms | 4 kb | 0.000002A | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 47L04T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 512 X 8 BITS | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 47L04 | R-PDSO-G8 | 3.6V | 2.7V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 512X8 | 8 | 1ms | 4096 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B101LA-ZS45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e4 | 活跃 | 3 (168 Hours) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B101 | 44 | 3V | 3.6V | 2.7V | 1Mb 128K x 8 | 52mA | Clock | NVSRAM | Parallel | 8b | 128KX8 | 8 | 45ns | 1 Mb | 0.005A | 45 ns | 8b | HH:MM:SS | 1.194mm | 18.415mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C56C-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C56C | 8 | 5V | 5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 |