类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 无卤素 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||||
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 | 24LC01BH-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.65mm | 40 | 24LC01BH | 8 | 不合格 | 5V | 2-Wire, Serial | 1Kb 128 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C1001-12F6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 32-CDIP (0.600, 15.24mm) Window | 32 | Non-Volatile | -40°C~85°C TA | Tube | e3 | yes | Obsolete | 1 (Unlimited) | 32 | EAR99 | Matte Tin (Sn) | 00.1.142 | 4.5V~5.5V | DUAL | 245 | 1 | 5V | 2.54mm | 120GHz | M27C1001 | 32 | 5V | 5V | 5V | 1Mb 128K x 8 | 30mA | 50mA | 120ns | EPROM | Parallel | 128KX8 | 3-STATE | 1 Mb | 0.0001A | COMMON | 4.5mm | 42.04mm | 13.36mm | 无 | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT34C02YI-GT5 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | CAT34C02 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 16X16 | 无卤素 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1010DDDR | 1.05mm | 4.5mm | 3.1mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC58BVG2S0HBAI4 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 63-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | Benand™ | 活跃 | 3 (168 Hours) | 63 | 2.7V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | R-PBGA-B63 | 3.6V | 2.7V | 4Gb 512M x 8 | ASYNCHRONOUS | FLASH | Parallel | 512MX8 | 8 | 25ns | 4294967296 bit | 3.3V | 1mm | 11mm | 9mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G66FJ-3GTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED AND IT ALSO OPERATES AT 1.7V WITH 1MHZ AND 2.5V AT 2MHZ | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 4.5V | 4Kb 256 x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 256X16 | 16 | 5ms | 4096 bit | SERIAL | 3-WIRE | 5ms | 8 | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC256-70SU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e3 | 活跃 | 2 (1 Year) | 28 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 70ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | 5V | 10ms | 2.65mm | 17.9mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1059DV33-12ZSXQ | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tube | 2002 | e4 | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 30 | CY7C1059 | 44 | 3.3V | 3.6V | 3V | 8Mb 1M x 8 | 1 | 100mA | SRAM | Parallel | 3-STATE | 8 | 12ns | 20b | 8 Mb | 0.02A | COMMON | Asynchronous | 8b | 2V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGNFV001 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~105°C TA | Tube | 2013 | FL-S | 活跃 | 3 (168 Hours) | 8 | IT ALSO CONFIGURED AS 256M X 1 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 不合格 | 3V | 3.6V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | 0.1mA | 8 ns | FLASH | SPI - Quad I/O | 64MX4 | 4 | 1b | 256 Mb | 0.0003A | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV102416BLL-25TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 48 | Matte Tin (Sn) - annealed | 1.65V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 48 | 3.6V | 2.5/3.3V | 2.4V | 16Mb 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 25ns | 20b | 16 Mb | 25 ns | COMMON | Asynchronous | 16b | 2.4V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC020AT-E/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.5mm | 40 | 25LC020A | 8 | 5V | SPI, Serial | 2Kb 256 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 2 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC024T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.5mm | 40 | 24LC024 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1418KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1418 | 165 | 1.8V | 36Mb 2M x 18 | 1 | 430mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 18 | 21b | 36 Mb | 0.26A | COMMON | Synchronous | 18b | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62C256AL-25ULI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 28-SOIC (0.330, 8.38mm Width) | YES | 28 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 40 | 28 | 5V | 256Kb 32K x 8 | 1 | 30mA | 30mA | SRAM | Parallel | 32KX8 | 8 | 25ns | 15b | 256 kb | 25 ns | Asynchronous | 8b | 2.84mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT34C04-X5M-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -20°C~125°C TA | Tape & Reel (TR) | 2012 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~3.6V | DUAL | 1 | 2V | 0.65mm | AT34C04 | 不合格 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | EEPROM | I2C | 4KX1 | 1 | 5ms | 4 kb | 0.000003A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | SOFTWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24FC128-I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24FC128 | 8 | 5.5V | 1.7V | I2C, Serial | 128Kb 16K x 8 | 3mA | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 128 kb | I2C | 5ms | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA320AX-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.05mm | 4.5mm | 3.1mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62126EV30LL-55BVXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~125°C TA | Tray | 1998 | MoBL® | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY62126 | 48 | 3V | 3.6V | 2.2V | 1Mb 64K x 16 | 1 | 35mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 16b | 1 Mb | 0.00003A | 55 ns | COMMON | Asynchronous | 16b | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1380D-167AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | 657.000198mg | Volatile | 0°C~70°C TA | Tray | 2000 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | CY7C1380 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 275mA | 275mA | 167MHz | 3.4ns | SRAM | Parallel | 512KX36 | 3-STATE | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 14mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 93AA46C-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SOP, SOP8,.25 | 小概要 | 1 | 64 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 85 °C | 有 | 93AA46C-I/SNG | 1 MHz | 64 words | 2.5 V | SOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.17 | SOIC | YES | 8 | Compliant | Bulk | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.8 V | Serial | 5.5 V | 1.8 V | 128 B | SYNCHRONOUS | 0.002 mA | 64X16 | 1.75 mm | 16 | 1 kb | 0.000001 A | 1024 bit | 1 MHz | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 6 ms | 200 | SOFTWARE | 8 | 4.9 mm | 3.9 mm | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32800J-7BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 90-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 90 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 10 | R-PBGA-B90 | 3.6V | 3V | 256Mb 8M x 32 | 1 | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 8MX32 | 32 | 268435456 bit | 1.2mm | 13mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256S10FHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 256Mb 16M x 16 | 0.08mA | 100ns | FLASH | Parallel | 16MX16 | 16 | 60ns | 24b | 256 Mb | 0.0001A | 2.7V | YES | YES | YES | 256 | 64K | 32B | YES | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C024-15AC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 锡铅 | 中断标志 | 4.5V~5.5V | QUAD | 240 | 1 | 5V | 0.5mm | not_compliant | 15GHz | 30 | CY7C024 | 100 | 不合格 | 5V | 5V | 64Kb 4K x 16 | 2 | 300mA | SRAM | Parallel | 4KX16 | 3-STATE | 16 | 15ns | 24b | 64 kb | 0.015A | 15 ns | COMMON | Asynchronous | 16b | 2V | YES | 1.6mm | 14mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS64C6416AL-15TLA3 | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~125°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 44 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 40 | 44 | 5V | 5V | 1Mb 64K x 16 | 1 | 50mA | SRAM | Parallel | 3-STATE | 16 | 15ns | 16b | 1 Mb | COMMON | Asynchronous | 16b | 2V | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC16B-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | EEPROM | 表面贴装 | SOIC | 8 | 400kHz | Bulk | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | DUAL | 鸥翼 | 260 | 1 | 5V | 1.27mm | 400kHz | 40 | 8 | 2/5V | INDUSTRIAL | I2C, Serial | 5.5V | 2.5V | 2kB | 3mA | 900 ns | 8 | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.75mm | 4.9mm | 3.91mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA56B-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 小概要 | 1 | 128 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 85 °C | 有 | 93AA56B-I/SNG | 1 MHz | 128 words | 5 V | SOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.29 | SOIC | YES | 8 | Compliant | Bulk | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.8 V | Serial | 5.5 V | 1.8 V | 256 B | SYNCHRONOUS | 0.002 mA | 128X16 | 1.75 mm | 16 | 2 kb | 0.000001 A | 2048 bit | 1 MHz | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 6 ms | 200 | SOFTWARE | 8 | 4.9 mm | 3.9 mm | 无 | 无铅 |