类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | 24VL014H/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -20°C~85°C TA | Tube | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5V~3.6V | DUAL | NOT APPLICABLE | 1 | 1.8V | 2.54mm | NOT APPLICABLE | 24VL014H | 8 | 不合格 | 3.3V | 3.6V | 1.5V | I2C, Serial | 1Kb 128 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CYD18S72V-100BBC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 484-BGA | 484 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | Obsolete | 3 (168 Hours) | 484 | Tin/Lead (Sn/Pb) | PIPELINED ARCHITECTURE OR FLOW-THROUGH | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | CYD18S72 | 484 | 3.3V | 3.465V | 3.135V | 18Mb 256K x 72 | 2 | 450mA | 100MHz | 5 ns | SRAM | Parallel | 3-STATE | 72 | 36b | 18 Mb | 0.075A | COMMON | Synchronous | 72b | 3.14V | 1.9mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R3235FM1IL0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2017 | e3 | 活跃 | 8 | Tin (Sn) | IT IS ALSO CONFIGURED AS 32M X 1 | 1.65V~3.6V | DUAL | 未说明 | 1 | 1.8V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 1.65V | 32Mb 4M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 8MX4 | 4 | 100μs, 10ms | 33554432 bit | SERIAL | 1.8V | 2 | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC160DT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1386D-167AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1386 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 275mA | 167MHz | 3.4ns | SRAM | Parallel | 512KX36 | 3-STATE | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.4mm | 20mm | 14mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 93AA66B-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 256 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 85 °C | 有 | 93AA66B-I/SNG | 1 MHz | 256 words | 2.5 V | TSSOP | SQUARE | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.27 | SOIC | YES | 8 | TSSOP, SOP8,.25 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.8 V | SYNCHRONOUS | 0.002 mA | 256X16 | 1.1 mm | 16 | 0.000001 A | 4096 bit | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 6 ms | 200 | SOFTWARE | 3 mm | 3 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF032BT-104V/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | 2.7V~3.6V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | SST26VF032 | 3V | 3.6V | SPI, Serial | 32Mb 4M x 8 | SYNCHRONOUS | 104MHz | 8 ns | FLASH | SPI - Quad I/O | 32MX1 | 1 | 1.5ms | 32 Mb | TS 16949 | 2.7V | 256B | BOTTOM/TOP | 2.03mm | 5.26mm | 5.25mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA160D-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25AA160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC080CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC080C | 8 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G02FVM-3GTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 0.65mm | 未说明 | BR24G02 | R-PDSO-G8 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 256X8 | 8 | 5ms | 2 kb | I2C | 5ms | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25A1MFJ-3MGE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | 2014 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | 5.5V | 2.5V | SPI, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 5ms | SPI | 5ms | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC160D-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160D | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1041DV33-10BVJXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 1996 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | CY7C1041 | 48 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 1 | 90mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | COMMON | Asynchronous | 16b | 2V | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC16BHT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24LC16BH | 8 | 5V | 1.7V | I2C, Serial | 16Kb 2K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010MMMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R6435FZNIL0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | MXSMIO™ | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) | ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT | 1.65V~3.6V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | R-PDSO-N8 | 3.6V | 1.65V | 64Mb 8M x 8 | SYNCHRONOUS | 80MHz | FLASH | SPI | 16MX4 | 4 | 100μs, 10ms | 67108864 bit | SERIAL | 3V | 2 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29LV160DBTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2009 | MX29LV | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | 底部启动区块 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | unknown | 未说明 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 16Mb 2M x 8 | ASYNCHRONOUS | FLASH | Parallel | 1MX16 | 16 | 70ns | 16 Mb | 0.000015A | 70 ns | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256S90TFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-S | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 3.6V | 3/3.3V | 2.7V | 256Mb 16M x 16 | 60mA | 90ns | FLASH | Parallel | 16b | 32MX8 | 8 | 60ns | 24b | 256 Mb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 256 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1302DV25-167BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2000 | e1 | yes | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 2.4V~2.6V | BOTTOM | 260 | 1 | 2.5V | 1mm | 30 | 165 | 2.5V | 9Mb 512K x 18 | 2 | 500mA | 167MHz | 2.5 ns | SRAM | Parallel | 3-STATE | 18 | 18b | 9 Mb | SEPARATE | Synchronous | 18b | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAT24C512LI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Surface Mount, Through Hole | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 1 | 5V | 2.54mm | CAT24C512 | 8 | 5V | 2-Wire, I2C, Serial | 512Kb 64K x 8 | 2.5mA | 1MHz | 900ns | EEPROM | I2C | 无卤素 | 5ms | 512 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 4.95mm | 10.16mm | 7.11mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF020B-80-4I-Q3AE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | 8-USON (3x2) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST25 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 2.7V~3.6V | 80MHz | SST25VF020B | 3.3V | SPI, Serial | 3.6V | 2.7V | 2Mb 256K x 8 | 20mA | 80MHz | 6 ns | FLASH | SPI | 8b | 10μs | 1b | 2 Mb | 80MHz | Synchronous | 8b | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR24T02FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 1.27mm | 未说明 | BR24T02 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1361C-133AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 2003 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 250 | 1 | 3.3V | 0.65mm | 40 | CY7C1361 | 100 | 3.3V | 3.6V | 3.135V | 9Mb 256K x 36 | 4 | 250mA | 133MHz | 6.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25S640FVT-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 未说明 | 1 | 1.8V | 0.65mm | 未说明 | BR25S640 | 8 | 不合格 | 5.5V | 1.7V | SPI, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 8 | 5ms | 64 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24CS04-MAHM-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2005 | e4 | yes | Discontinued | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | AT24CS04 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDMR | 0.6mm | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1512KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1512 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 650mA | 250MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 21b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant |