类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | M24C08-FMC6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-UFDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 1 | 1.8V | 0.5mm | M24C08 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | I2C | 5ms | 0.6mm | 3mm | 2mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV24C256WE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | ACTIVE (Last Updated: 1 week ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 1 | 3.3V | 1.27mm | 8 | 不合格 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | 3mA | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 无卤素 | 8 | 5ms | 2 Mb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256-20DM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 通孔 | 28-CDIP (0.600, 15.24mm) | 28 | Non-Volatile | -55°C~125°C TC | Tube | 活跃 | 1 (Unlimited) | 28 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 200GHz | AT28C256 | 5.5V | 4.5V | 256Kb 32K x 8 | 50mA | 200ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 10ms | 10 | HARDWARE/SOFTWARE | YES | NO | 5.72mm | 37.215mm | 15.24mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1470V33-200AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1470 | 100 | 3.3V | 3.6V | 3.135V | 72Mb 2M x 36 | 4 | 500mA | 200MHz | 3ns | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | JS28F512P30BFA | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | Axcell™ | e3 | Obsolete | 3 (168 Hours) | 56 | Matte Tin (Sn) | 底靴 | 1.7V~2V | DUAL | 260 | 1 | 1.8V | 0.5mm | 30 | 28F512P30 | 1.8V | 1.81.8/3.3V | 1.7V | Parallel, Serial | 512Mb 32M x 16 | 31mA | 40MHz | FLASH | Parallel | 32MX16 | 16 | 110ns | 25b | 512 Mb | 0.000225A | 110 ns | Asynchronous | 16b | NO | NO | 4511 | 16K64K | 16words | BOTTOM | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC04BHT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Automotive grade | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2002 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 1.27mm | 40 | 24LC04BH | 8 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | 0.000005A | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT93C66A-10SU-1.8 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 250kHz | AT93C66A | 5V | Serial | 5.5V | 1.8V | 4Kb 512 x 8 256 x 16 | 2mA | 2MHz | 250 ms | EEPROM | SPI | 10ms | 4 kb | 250kHz | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC512-I/PG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | NOT APPLICABLE | 1 | 4.5V | 2.54mm | NOT APPLICABLE | 24LC512 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | I2C, Serial | 512Kb 64K x 8 | 5mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV10248BLL-10TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 3A991 | Matte Tin (Sn) - annealed | 2.4V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 40 | 44 | 3V | 3.6V | 8Mb 1M x 8 | 2 | 100mA | SRAM | Parallel | 1MX8 | 3-STATE | 10ns | 20b | 8 Mb | 10 ns | COMMON | Asynchronous | 8b | 18.415mm | 10.16mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1420KV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1420 | 165 | 1.8V | 36Mb 1M x 36 | 1 | 490mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 20b | 36 Mb | 0.26A | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93L86RFVM-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn97.5Cu2.5) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR93L86 | 8 | 不合格 | 5V | Serial | 16Kb 1K x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 0.000002A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 0.9mm | 2.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS63LV1024L-10TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | 32 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 最后一次购买 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 3.15V~3.45V | DUAL | 260 | 1 | 3.3V | 40 | 32 | 3.3V | 3.45V | 1Mb 128K x 8 | 1 | 160mA | SRAM | Parallel | 3-STATE | 10ns | 17b | 1 Mb | COMMON | Asynchronous | 8b | 2V | 20.95mm | 10.16mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA46CX-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA46C | 8 | 5.5V | 2/5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 64X16 | 16 | 6ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25G256FJ-3GE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2014 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 1.6V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | 5.5V | 1.6V | SPI, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 8 | 5ms | 262144 bit | SPI | 5ms | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 11LC020T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 11LC020 | 8 | 5V | Serial | 2Kb 256 x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 2 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 750μm | 3mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PC28F256P33TFE | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 64-TBGA | YES | 64 | Non-Volatile | -40°C~85°C TC | Tray | 2011 | Axcell™ | e1 | Obsolete | 3 (168 Hours) | 64 | 锡银铜 | 2.3V~3.6V | BOTTOM | 260 | 1 | 3V | 30 | 28F256P33 | 2.5/3.3V | 2.3V | Parallel, Serial | 256Mb 16M x 16 | 31mA | 52MHz | FLASH | Parallel | 16MX16 | 95ns | 24b | 256 Mb | 0.00021A | 95 ns | Asynchronous | 16b | NO | NO | 4255 | TOP | 1.2mm | 10.1mm | 8.1mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 47L04-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 512 X 8 BITS | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 47L04 | R-PDSO-G8 | 3.6V | 2.7V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 512X8 | 8 | 1ms | 4096 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF800B-70-4I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | SST39WF800B | 48 | 1.8V | 1.95V | 1.65V | 8Mb 512K x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 16 | 40μs | 19b | 8 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 256 | 2K | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24AA08-I/PG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | DIP, DIP8,.3 | IN-LINE | 1000 | PLASTIC/EPOXY | DIP8,.3 | -40 °C | 未说明 | 85 °C | 有 | 24AA08-I/PG | 0.1 MHz | 1024 words | 2.5 V | DIP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.25 | DIP | NO | 8 | Compliant | Bulk | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | THROUGH-HOLE | 未说明 | 1 | 2.54 mm | compliant | 400 kHz | 8 | R-PDIP-T8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.7 V | I2C | 5.5 V | 1.7 V | 1 kB | SYNCHRONOUS | 0.003 mA | 900 ns | 1KX8 | 5.334 mm | 8 | 0.000001 A | 8192 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE | 1010XMMR | 9.27 mm | 7.62 mm | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAV25160YE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 157.991892mg | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 100 YEAR DATA RETENTION | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | CAV25160 | 8 | 5.5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 3mA | 20MHz | 35 ns | EEPROM | SPI | 无卤素 | 8 | 5ms | 16 kb | 0.000005A | SPI | 5ms | 100 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL01GS11DHIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | GL-S | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 1Gb 64M x 16 | 60mA | 110ns | FLASH | Parallel | 16b | 128MX8 | 8 | 60ns | 26b | 1 Gb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 1K | 64K | 32B | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M45PE10-VMN6P | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 1998 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | M45PE10 | 8 | 3.3V | 2.7V | SPI, Serial | 1Mb 128K x 8 | 12mA | 75MHz | 8 ns | FLASH | SPI | 3ms | 1b | 1 Mb | 0.00001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 23ms | 20 | HARDWARE/SOFTWARE | 256B | 1.75mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JS28F512P33BFD | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | Axcell™ | e3 | yes | Obsolete | 3 (168 Hours) | 56 | 哑光锡 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | 28F512P33 | 56 | 2.3V | Parallel, Serial | 512Mb 32M x 16 | 31mA | 40MHz | FLASH | Parallel | 32MX16 | 16 | 105ns | 25b | 512 Mb | 105 ns | Asynchronous | 16b | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G256F-3AGTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 1.7V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | BR24G256 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 8 | 5ms | 256 kb | I2C | 5ms | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAT24C16LI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Gold | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 1 | 3.3V | 2.54mm | CAT24C16 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 16KX1 | 无卤素 | 5ms | 16 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010MMMR | 4.95mm | 10.16mm | 7.11mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 |