类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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![]() | 93AA56A-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 1.8V~5.5V | DUAL | 1 | 5V | 2.54mm | 93AA56A | 8 | 5.5V | 2/5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 3.3mm | 9.27mm | 6.35mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62158ELL-45ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 30 | CY62158 | 44 | 5V | 5V | 5V | 8Mb 1M x 8 | 1 | 25mA | 25mA | SRAM | Parallel | 3-STATE | 8 | 45ns | 20b | 8 Mb | 0.000008A | 45 ns | COMMON | Asynchronous | 8b | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY14B104LA-ZS45XIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 44 | 不合格 | 3V | 3.6V | 2.7V | 4Mb 512K x 8 | 52mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 512KX8 | 8 | 45ns | 4 Mb | 0.005A | 45 ns | 8b | 1.194mm | 18.415mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | USBF129T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 8542.32.00.71 | 2.7V~3.6V | DUAL | 1 | 1.27mm | USBF129 | R-PDSO-G8 | 3.6V | 2.7V | 4Mb 512K x 8 | SYNCHRONOUS | 30MHz | FLASH | SPI | 512KX8 | 8 | 5ms | 4194304 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1312KV18-300BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1312 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 640mA | 300MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 19b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62137FV30LL-55ZSXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tube | 2001 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62137 | 44 | 3V | 3.6V | 2.2V | 2Mb 128K x 16 | 1 | 25mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 17b | 2 Mb | 55 ns | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MB85RC04VPNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOP | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2015 | Discontinued | 3 (168 Hours) | 85°C | -40°C | 3V~5.5V | 1MHz | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 1MHz | 550ns | FRAM | I2C | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25L3206EMI-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2009 | MX25xxx05/06 | e3 | yes | 不用于新设计 | 3 (168 Hours) | 16 | 3A991.B.1.A | Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 40 | 16 | R-PDSO-G16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 32Mb 4M x 8 | SYNCHRONOUS | 86MHz | FLASH | SPI | 16MX2 | 2 | 50μs, 3ms | 32 Mb | 0.00002A | 3.3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 2.65mm | 10.3mm | 7.52mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | CY14V104LA-BA45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | e1 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 30 | CY14V104 | 48 | 3.3V | 3.6V | 3V | 4Mb 512K x 8 | 52mA | NVSRAM | Parallel | 8b | 512KX8 | 8 | 45ns | 4 Mb | 0.008A | 45 ns | 8b | 1.2mm | 10mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL256SAGBHIA10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FL-S | 活跃 | 3 (168 Hours) | 24 | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 64MX4 | 4 | 0.0001A | 268435456 bit | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 1.2mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR24G32FJ-3GTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 1.6V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | BR24G32 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 32 kb | I2C | 5ms | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY14B256PA-SFXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 3 (168 Hours) | 16 | 3A991.B.2.A | 哑光锡 | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 40MHz | 9 ns | NVSRAM | SPI | 8b | 32KX8 | 8 | 256 kb | 0.00025A | 2.667mm | 10.2865mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62146ELL-45ZSXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tube | 2001 | MoBL® | e4 | yes | Discontinued | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 20 | CY62146 | 44 | 5V | 5V | 4Mb 256K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 18b | 4 Mb | 0.000007A | 22MHz | 45 ns | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24AA32AT/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24AA32A | 8 | 6V | I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC160B-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 25LC160B | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | 6mA | 10MHz | 100 ns | EEPROM | SPI | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3.3mm | 9.27mm | 6.35mm | 无 | 无SVHC | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC160/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 25LC160 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 2MHz | 230 ns | EEPROM | SPI | 5ms | 16 kb | 0.000002A | SPI | 10000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.55mm | 5mm | 3.99mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF1682-70-4C-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF1682 | 48 | 3.3V | 3.6V | 2.7V | 16Mb 2M x 8 | 18mA | 70ns | FLASH | Parallel | 8b | 2MX8 | 8 | 10μs | 21b | 16 Mb | 0.00002A | Asynchronous | 8b | 2.7V | YES | YES | YES | 512 | 4K | YES | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | BR24L16FVM-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn97.5Cu2.5) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR24L16 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | 2mA | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 16 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010MMMR | 1.095mm | 2.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | 47L16-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tube | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 47L16 | R-PDSO-G8 | 3.6V | 2.7V | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 2KX8 | 8 | 1ms | 16384 bit | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C66B-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C66B | 8 | 5V | 5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 2ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 950μm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24LC025/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24LC025 | 8 | 5.5V | 2.2/5.5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 10ms | 200 | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C256-20FM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 表面贴装 | 28-CFlatPack | YES | Non-Volatile | -55°C~125°C TC | Tube | 1997 | e0 | no | 活跃 | 3 (168 Hours) | 28 | 锡铅 | 自动写入 | 4.5V~5.5V | DUAL | 240 | 1 | 5V | 1.27mm | 30 | AT28C256 | R-CDFP-F28 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 3-STATE | 8 | 10ms | 0.0003A | 262144 bit | MIL-STD-883 Class C | 5V | 10000 Write/Erase Cycles | 10ms | YES | YES | NO | 64words | 3.02mm | 18.285mm | 10.16mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | PC28F128P30BF65A | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 64-TBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | StrataFlash™ | e1 | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 1.7V~2V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | 28F128P30 | 64 | 1.8V | 1.81.8/3.3V | 1.7V | Parallel, Serial | 128Mb 8M x 16 | 28mA | 52MHz | FLASH | Parallel | 8MX16 | 16 | 65ns | 23b | 128 Mb | 0.000055A | 65 ns | Asynchronous | 16b | NO | NO | 4127 | 8words | BOTTOM | 1.2mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL256SAGMFV001 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~105°C TA | Tube | 2016 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | SYNCHRONOUS | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 64MX4 | 4 | 0.0003A | 268435456 bit | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S25FL512SAGBHVA10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 24-TBGA | 24 | Non-Volatile | -40°C~105°C TA | Tray | 2016 | FL-S | 活跃 | 3 (168 Hours) | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.6V | 3/3.3V | 2.7V | Parallel, SPI, Serial | 512Mb 64M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 64MX8 | 8 | 32b | 512 Mb | 0.0003A | Asynchronous | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 1.2mm | 8mm | ROHS3 Compliant |