类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | S29WS512P0SBFW000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 84-VFBGA | 84 | Non-Volatile | -25°C~85°C TA | Tray | WS-P | e1 | 活跃 | 3 (168 Hours) | 84 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 1.7V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 40 | 1.8V | 1.95V | 1.7V | Parallel, Serial | 512Mb 32M x 16 | 80mA | 80MHz | 80ns | FLASH | Parallel | 16b | 32MX16 | 16 | 60ns | 25b | 512 Mb | 0.000005A | Asynchronous | 16b | YES | YES | 8 510 | 16K64K | 8words | BOTTOM/TOP | 1mm | 11.6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128P90TFCR20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | 0°C~85°C TA | Tray | 2012 | GL-P | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 3.3V | 3.6V | 3V | 128Mb 16M x 8 | 110mA | FLASH | Parallel | 8b | 128MX1 | 1 | 90ns | 128 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGMFB000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~105°C TA | Tray | 2016 | FL-S | e3 | yes | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 3.6V | 2.7V | SPI, Serial | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 32MX4 | 4 | 134217728 bit | AEC-Q100 | 3V | 500ms | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62136EV30LL-45BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2001 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY62136 | 48 | 3V | 3.6V | 2.2V | 2Mb 128K x 16 | 1 | 20mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 17b | 2 Mb | 0.000003A | 22MHz | 45 ns | COMMON | Asynchronous | 16b | 1V | 8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF1681-70-4C-EKE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 0.5mm | SST39VF1681 | 3.3V | 16Mb 2M x 8 | 18mA | 70ns | FLASH | Parallel | 8b | 2MX8 | 8 | 10μs | 21b | 16 Mb | 0.00002A | Asynchronous | 8b | YES | YES | YES | 512 | 4K | YES | BOTTOM | YES | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C32CN-SH-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | 1997 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 1MHz | AT24C32 | 3.3V | 2-Wire, I2C, Serial | 3.6V | 1.8V | 32Kb 4K x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 32 kb | 1MHz | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14V256LA-BA35XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 30 | CY14V256 | 不合格 | 3.3V | 3.6V | 3V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 32KX8 | 8 | 35ns | 256 kb | 0.008A | 35 ns | 8b | 1.2mm | 10mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF040B-50-4C-ZAE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 表面贴装 | 8-UFBGA, CSPBGA | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST25 | 活跃 | 3 (168 Hours) | 8 | 2.7V~3.6V | BOTTOM | 1 | SST25VF040B | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 15mA | 50MHz | 8 ns | FLASH | SPI | 8b | 4MX1 | 1 | 10μs | 1b | 4 Mb | TS 16949 | Synchronous | 8b | 2.7V | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS25LP064A-JBLE-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 8 | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 3V | 3.6V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 64MX1 | 1 | 800μs | 24b | 64 Mb | 3V | 256B | 2.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF1602-70-4C-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2010 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF1602 | 48 | 3.3V | 3.6V | 2.7V | 16Mb 1M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 10μs | 20b | 16 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 512 | 2K | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | BR93L76RFVT-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR93L76 | 8 | 不合格 | 5V | Serial | 8Kb 512 x 16 | SYNCHRONOUS | 2MHz | 200 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000002A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
| AT25080N-10SI-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 3MHz | AT25080 | SPI, Serial | 8Kb 1K x 8 | 3MHz | EEPROM | SPI | 5ms | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25256XI | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | CAT25256 | 8 | 5V | SPI, Serial | 256Kb 32K x 8 | 4mA | 20MHz | 75 ns | EEPROM | SPI | 5ms | 256 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.78mm | 5.33mm | 5.38mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF040B-50-4I-SAE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1998 | SST25 | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 1.27mm | 40 | SST25VF040B | 3.3V | 3.6V | 2.7V | SPI, Serial | 4Mb 512K x 8 | 50MHz | 8 ns | FLASH | SPI | 4MX1 | 1 | 10μs | 4 Mb | 2.7V | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25R8035FZUIL0 | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2017 | MXSMIO™ | 活跃 | 3 (168 Hours) | 8 | IT IS ALSO CONFIGURED AS 8M X 1 | 1.65V~3.6V | DUAL | 未说明 | 1 | 1.8V | 0.5mm | 未说明 | R-PDSO-N8 | 3.6V | 1.65V | 8Mb 1M x 8 | SYNCHRONOUS | 33MHz | 12 ns | FLASH | SPI | 2MX4 | 4 | 100μs, 10ms | 8388608 bit | SERIAL | 1.8V | 2 | 85°C | 600μm | 3mm | 2mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C01C-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C01C | 8 | 5V | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 1.5ms | 1 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1.5ms | 200 | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24HC04B-TH-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | AT24HC04 | 5V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 4 kb | 0.000003A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDMR | 1.05mm | 4.5mm | 3.1mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGBHI300 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | FL-S | 活跃 | 3 (168 Hours) | 24 | 3A991.B.1.A | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 32MX4 | 4 | 1b | 128 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | 1.2mm | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1010DV33-10ZSXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10GHz | 30 | CY7C1010 | 3.3V | 3.6V | 3V | 2Mb 256K x 8 | 1 | 90mA | SRAM | Parallel | 256KX8 | 3-STATE | 8 | 10ns | 18b | 2 Mb | COMMON | Asynchronous | 8b | 2V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC04BHT-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Gold | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 5 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 40 | 24LC04BH | 5 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 2.9mm | 1.6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA66A-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 93AA66A | 8 | 5.5V | 2/5V | Serial | 4Kb 512 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 950μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | W25Q128JVEIQ | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tube | 2012 | SpiFlash® | yes | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | IT ALSO OPERATES AT 104 MHZ CLOCK FREQUENCY AT 2.7 TO 3.0 V SUPPLY VOLTAGE | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-N8 | 3.6V | 3V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 16MX8 | 8 | 3ms | 134217728 bit | SERIAL | 3V | 1 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L51245GZ2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | MXSMIO™ | e3 | 不用于新设计 | 3 (168 Hours) | 8 | Tin (Sn) | CAN BE ORGNISED AS 512 MBIT X 1 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 8 | R-PDSO-N8 | 3.6V | 2.7V | 512Mb 64M x 8 | SYNCHRONOUS | 166MHz | FLASH | SPI | 128MX4 | 4 | 60μs, 750μs | 536870912 bit | SERIAL | 2.7V | 2 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC66AX-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC66A | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | NAND512W3A2BN6E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | e6 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 锡铋 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | NAND512 | 48 | 3.6V | 3/3.3V | 2.7V | 512Mb 64M x 8 | FLASH | Parallel | 8b | 64MX8 | 8 | 50ns | 0.00005A | 536870912 bit | 12000 ns | 3V | NO | NO | YES | 4K | 16K | 512words | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 |